本實驗使用溶膠凝膠法來製備二氧化鈦薄膜，改變溶液比例參數然後利用旋轉塗佈法將溶液塗佈在矽基板上，並且利用二氧化碳雷射0.5 W、1.5 W和3 W這三種不同雷射功率對氧化鈦薄膜進行退火改質。
結果分析方面，分別使用低掠角X光繞射儀(Grazing incidence X-ray diffraction, GIXRD)、掃描式電子顯微鏡(Scanning electron microscopy, SEM)、傅立葉轉換紅外線分光光譜儀(Fourier transform infrared spectroscopy, FTIR)和光激發螢光光譜(Photoluminescence, PL)對初鍍膜以及退火後的氧化鈦薄膜的表面形貌、材料結構、鍵結含量和發光行為進行分析研究。
所有初鍍膜的氧化鈦薄膜在經過GIXRD的量測之後可以確定所有薄膜在退火前皆為非晶結構。而在經過雷射退火之後，只有異丙氧鈦莫爾濃度加倍(C組)的氧化鈦薄膜在經過雷射功率0.5 W的雷射退火後產生了Anatase相，而所有的氧化鈦薄膜在經過雷射功率1.5 W和3.0 W的退火加工後皆呈現了Rutile相結構。
未退火的氧化鈦薄膜在PL光譜中在550 nm的位置顯示出明顯的波峰訊號，而經過退火的氧化鈦薄膜生成Rutile(1 1 0)結晶相後在433 nm處發現了Rutile相氧缺陷所造成的深層發光，而隨著溫度的升高，Rutile(1 0 1)結晶相也跟著增強，Rutile相氧缺陷的PL光譜訊號波峰位置跟著紅移且訊號增強。
我們利用Ansys這套模擬軟體模擬氧化鈦薄膜在經過二氧化碳雷射退火改質時氧化鈦薄膜的溫度變化與實驗結果比對做驗證。

Titanium oxide (TiOx) thin films that were fabricated by sol-gel process with varies solution ratios parameters were deposited on the Si substrate by spin coated and then annealed by CO2 laser annealing with three different power:0.5 W, 1.5 W and 3.0 W in atmosphere.
The structure, morphology, bonding and luminescence behaviors of the as-deposited and annealed TiOx thin films were analyzed by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), Fourier Transform Infrared spectroscopy (FTIR) and photoluminescence (PL) spectroscopy, respectively.
The as-deposited TiOx thin films were amorphous from GIXRD. Only the TiOx thin films that have double molar ratio of TTIP had distinct crystalline peak of Anatase phase after laser annealing by power 0.5 W. And all of TiOx thin films had distinct crystalline peak of Rutile phase after laser annealing by power 1.5 W and 3.0 W.
The as-deposited TiOx thin films had distinct peak at 550 nm in PL spectra. Annealing TiOx thin films that have Rutile (1 1 0) phase was found a peak at 433 nm which were attributed to deep-level emissions of oxygen vacancies in the Rutile phase. The increasingly intensity and red-shift of PL peak that was made by oxygen vacancies in Rutile phase was concerned with temperature rising making the Rutile (1 0 1) peak intensity increasing.
We used the simulation software: Ansys to simulate TiOx thin films annealing temperature by CO2 laser, and explain the experiment data.

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