本論文以室溫溶液製程製作氧化鎳及銅摻雜氧化鎳電阻式記憶體。氧化鎳及銅摻雜氧化鎳奈米粒子懸浮液以旋轉塗布及室溫乾燥的方式在氧化銦錫/玻璃基板上製作氧化鎳及銅摻雜氧化鎳薄膜。本論文與傳統溶液製程（溶膠凝膠法）相比，成功降低了製程溫度及簡化了製程步驟。
以純氧化鎳製作的電阻式記憶體元件可以正常開關超過200次並具有10^4的開關比(在0.1 V時讀取)。元件的記憶保持大於10^4秒。除此之外，以銅摻雜氧化鎳製作的電阻式記憶體元件可以正常開關大約1400次並具有5*10^3的開關比。 除了反覆讀寫能力獲得提升外，銅摻雜也改善了元件開關電壓的分佈。元件的記憶保持也大於10^4秒。相較於其他溶液製程的元件，我們的元件具有更好的表現，尤其是在反覆讀寫能力上的改進。因為反覆讀寫能力及穩定性是目前電阻式記憶體最大的挑戰，所以銅摻雜可以在這方面具有相當大的優勢。
在導通機制方面的研究，銅摻雜增加了陷阱密度(trap density)。因此隨著銅摻雜濃度上升，導通機制從空間電荷限制傳導轉換普爾-夫倫克爾發射。

In this thesis, NiO and Cu:NiO resistive memory devices were demonstrated by room-temperature solution process. The NiO-based films in the memory devices were fabricated by spin-coating of NiO-based nanoparticles suspensions on ITO/glass substrates and drying in room temperature. We successful reduced the process temperature and simplified the fabrication procedure compared with traditional solution process, sol-gel method.
The device with pure NiO can work properly for more than 200 times with on/off ratio 10^4 (read at 0.1 V). The retention time of the device is more than 10^4 seconds. Additionally, the device with Cu:NiO can work properly for around 1400 times with on/off ratio 5*10^3 (read at 0.1 V). The Cu doping also improve the dispersion of setting and resetting voltage. The retention time of the device is more than 10^4 seconds. Compared with the devices made by other solution methods, our devices have better performance, especially in endurance. Since endurance and reliability are the major challenges for resistive memories, Cu doping can bring huge advantage in NiO-based resistive memory devices.
The conduction mechanisms were also investigated. The Cu doping increases the trap density; therefore, as the doping concentration increasing, the conduction mechanism switches from space-charge-limited conduction to Poole-Frenkel emission.

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