本論文主題是研究碳化矽場效電晶體元件的開關性能對馬達驅動系統的影響，並提出選擇切換頻率時需要注意的條件。提升馬達轉速有助於提高馬達功率密度，欲驅動高速馬達需要提升驅動電路的切換速度。本論文提出以空間向量脈波寬度調變造成之電流漣波作為判斷切換頻率是否足夠的條件。碳化矽元件耐高電壓及耐熱，與同功率條件之矽基元件相比，開關速度快、切換損失少。應用在馬達驅動系統的三相變頻器，使控制晶片的脈波寬度調變模組能夠提高切換頻率，增加控制器修正命令的次數及精度。擴大空間向量脈波寬度調變驅動法的頻寬，有助於強化控制轉矩，進一步抑制電流漣波。抑制脈波寬度調變命令造成之漣波，控制器可以釋放電流的保護限制，使控制命令使用到更完整的電壓範圍，重新設計更大的控制器增益值，得以提升馬達驅動系統性能。
　　文中以Simulink建構馬達驅動系統，模擬碳化矽元件驅動電路提升切換頻率對於控制命令之影響及馬達驅動系統性能之變化，再以新的驅動器表現更新控制器參數，使用硬體在線回路測試模擬結果。

This thesis proposes how the switching frequency of the silicon carbide field effect transistor (SiC MOSFET) affects the permanent magnet synchronous motor (PMSM) drive system. The relation between the switching frequency of the space vector pulse width modulation (SVPWM) and the current ripple of the motor is analyzed.
Based on the high-speed switching capability of SiC MOSFETs, several options are proposed when selecting the switching frequency for the driving methods that adopt SVPWM. To confirm the control response, Simulink is used to simulate the voltage source inverter (VSI) and internal permanent magnet synchronous motor (IPM) models of motor drive systems. Then, Texas Instruments' microcontroller and hardware-in-the-loop (HIL) devices are applied to validate the simulation results and the performance of the proposed method.

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