隨著智慧電子產品的盛行，輕薄短小已不能滿足使用端，因此更柔軟可撓曲的穿戴式產品需求開始浮現。電子設備的柔軟化需要內部的顯示器、電路板、電池等都需要具備軟性材料特質。而在電場驅動元件中，高介電材料除了可以當作電容使用，亦可以大幅降低元件開啟電壓，因此介電性質為電子元件中一個重要的考量因素。
作為可撓式鐵電高分子多晶材料，由於結晶取向不一致，以及偶極矩較小，相較於無機陶瓷，介電常數較低。因此，科學家透過混摻無機鐵電晶相，形成有機無機混成鐵電材料，試圖保留高分子材料的可撓曲性以及無機材料的高介電常數。
藉由無機晶相前驅物PbI2傾向析出分佈於PMMA區域，利用調控PFO/PMMA相分佈，控制無機晶相CH3NH3PbI3的分佈情形，再加以混摻PVDF-TrFE/PMMA，發展出以界面極化的機制提升薄膜介電常數。以及不同比例的PVDF-TrFE/PMMA薄膜介電性質與其極化的機制

In this study, we investigate the dielectric property of organic ferroelectric materials (PVDF-TrFE), inorganic ferroelectric materials (CH3NH3PbI3) and hybrid materials (CH3NH3PbI3/PVDF-TrFE/PMMA). Capacitance is measured in metal-insulator-metal structure and used to calculate the dielectric constant. The thin film with arrayed PVDF-TrFE lamellar crystal results in the highest dielectric constant in organic materials which dielectric constant is 72. The inorganic materials (CH3NH3PbI3) has lower dielectric constant due to the dipole direction, which is perpendicular to the substrate thus cannot contribute to the measurement of capacitance.
PVDF-TrFE is a ferroelectric polycrystal materials. Because of the different orientation of crystalline and direction of dipole, PVDF-TrFE has relative lower dielectric constant compare with inorganic materials. Hence, via introducing the inorganic materials, trying to obtain the advantage of both organic materials and inorganic materials.
Due to the possibility of interfacial polarization, hybrid materials might have higher dielectric constant compare with the intrinsic materials. With the different affinity of organic materials and inorganic materials, PbI2, precursor of perovskite CH3NH3PbI3, can be selectively distributed in PMMA domain of PFO/PMMA phase distribution thin film and control the dispersion of perovskite CH3NH3PbI3. Thus, the contact area of organic and inorganic materials is controlled by dispersion of perovskite.

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