本論文係研究利用本論文係研究利用不同的圖形和線寬的基板對生長二硒銅銦薄膜的效應。吾人利用微影製程並採用濕式蝕刻將圖形轉移至基板上。經過優化過後的微影製程，吾人利用濺鍍的方式將厚度約為150奈米的鉬背電極沉積在有圖形的基板上，再以兩階段蒸鍍的方式將二硒銅銦薄膜沉積於背電極上。
為了分析出圖形機板二硒銅銦薄膜生長的效應，吾人利用XRD來研究薄膜的結晶方向。由實驗的結果指出，圖形P2 形成最高結晶強度CIS(220)/CIS(112)之比例,而就整體而言，其改善的順序為P2>P1>P4>P3>NP。此外，吾人同時發現基板圖形之改變對於二銦化三硒的結晶方向有明顯的影響，將TEM的影像經過快速傅立葉轉換，吾人發現可以在蝕刻出來凹槽底部發現薄膜為{100}矩形堆積而平坦的位置則為{001}六角堆積。本文還指出造成改變的原因源至於二銦化三硒的薄膜而非鉬薄膜所造成的影響。

In this thesis, we investigate the influences of different scales and shapes pattern substrates on the formation of CIS. To transfer the pattern structures to the substrates, we adopt photolithography process with wet etching. After optimizing lithography process, we sputter about 150 nm of thickness of Mo film on patterned substrates followed by using “two step co-evaporation” method to form CIS.
In order to analyze the influences of substrate structures effects, we used X-ray diffraction (XRD) to examine crystalline orientation. The results show that pattern P2 achieved highest I(220)/I(112) ratio based on XRD data and the order of improvement is P2>P1>P4>P3>NP. Furthermore, we also found that substrate texturing strongly influences In2Se3 preferred phase formation. By using fast Fourier transform electron-diffraction (FTED) patterns obtained from the TEM images, we figure out that In2Se3 layer stacking with {001} hexagonal nature and {100} rectangular character can be observed from a flat area and inside a cavity, respectively. We also indicated that the change is due to the precursor of In2Se3 rather than the effect of Mo film.

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