在本研究中，利用原子力顯微鏡(Atomic Force Microscopy，AFM)系統觀察鐵酸鉍磊晶薄膜(BiFeO3，BFO)動態行為(Dynamic behavior)。利用壓電力顯微鏡(Pizeoresponse Force Microscopy，PFM)可同時觀察表面形貌、電偶極垂直(out of plane，OP)及水平(in plane，IP)分量，藉此可建構出BFO磊晶薄膜的電域結構，並進行動態量測結果顯示BFO(001)/SRO/STO/miscut 30磊晶薄膜反向成長活化場α為2.601 MV/cm ~ 2.895 MV/cm；電域正向成長的活化場α為0.889 MV/cm ~ 0.947 MV/cm。利用BFO(001)/SRO/DSO磊晶薄膜說明域壁對活化場無明顯的影響；利用BFO(111)/SRO/STO說明極化軸方向明顯影響活化場。利用BFO(001)/SRO/DSO 100 nm與1000 nm說明膜厚對活化場有明顯影響。另外利用表面電位顯微鏡(Kelvin Force Microscopy，KFM)觀察到在施加電壓使電域翻轉的同時，由探針注入屏蔽電荷(Screen Charge)，並且利用此點建立屏蔽電荷模型解釋BFO磊晶薄膜的動態行為，指出靜電能在電域成長的過程中扮演重要角色。

In this study, I present a quantitative study of the 180 degree domain wall motion in epitaxial BiFeO3 films, and discuss the domain growth behaviors by the piezoresponse force microscopy (PFM). The topography, in-plane (IP), and out-of-plane (OP) components of domains for BFO thin films can be revealed simultaneously. The upward and downward activation field (αup and αdown) on BFO(001)/SRO/STO epitaxial thin film was about 2.601~ 2.895 MV/cm and 0.889~ 0.947 MV/cm, respectively. We suggest the as-grown 710 domain wall only had clip effects on dynamic behaviors of the domains. When the domain grew to the size about original domain width, the domain wall was clipped by the 710 domain wall. . In order to understand the polarization axis and the thickness effect under the dynamic process, we used two different samples, BFO(111)/SRO/STO and BFO(001)/SRO/DSO thin films. Finally, we created a screen charge model to support the activation behavior. The static electricity energy plays a critical role in the activation process.

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