本研究之目的在輔助由面型微細加工(surface-micromachining)技術所開發出來的水聲微感測器元件之最佳分析。此感測器之原理是利用薄膜結構上所鋪設的壓阻材料(多晶矽)，當薄膜結構承受聲壓而產生應力或應變量時，由壓阻效應以獲得其相對應之電阻值。本研究在不考慮受外界溫度影響的條件下，利用惠斯登電橋電路，將聲學訊號轉換為電壓訊號，以建立最佳設計參數，供未來設計感測器研究之參考，並提高微感測器在測試時的可靠度。
本文利用ANSYS®有限元素分析軟體，來分析水聲微感測器之設計尺寸，受聲壓影響所造成的電阻值變化，並探討壓阻元件擺放位置與電壓輸出的靈敏度之關係。本文係以古典樑理論分析再與有限元素法分析的計算結果相比較，以驗證各結果的可靠性。由有限元素分析的結果顯示，矽薄膜的長度愈長而厚度愈薄，則微感測器的靈敏度愈高，當矽薄膜的長度為1636μm及厚度為5μm，其感測器表面上的壓阻元件，若令有效長度為160μm，寬度為4μm及厚度為0.3μm時，而非有效長度為20μm，其輸出電壓約為7.2mV，則靈敏度可達到14.4mV/V/kPa，可提升水聲微感測器之靈敏度。

The purpose of this research is to provide an optimum design of acoustic micro-sensor developed by surface-micromachining in micro mechtronics. The principle of sensor is to use piezo-resistive sensing device (such as poly-silicon) built on membrane structure for receiving sound pressure to produce stress or strain to obtain corresponding resistive value by piezo-resistive effect. This research uses Wheatstone Bridge to transform acoustic signal into voltage signal by neglecting temperature effect.The optimum parameter of design acoustic micro-sensor can provide reference of research. An optimum parameter is obtained for sensor design in future, it may increase the reliability of sensor for testing.
In this research, ANSYS® finite element method (FEM) soft is used to analyze the resistive variation caused by sound pressure of different dimension design of sensors and the relation between piezo-resistive arranged position and voltage output sensitivity is discussed. In this thesis, results of classical beam theory are compared with ANSYS® results to verify their reliability. The results of ANSYS® show that the thinner and longer the membrane is, the better the sensitivity of the sensor is. When silicon membrane length is 1636μm and thickness is 5μm, if the effective length of the piezo-resitive sensing device is set 160 μm with width 4μm and thickness 0.3μm , non-effective length is set 20μm and its voltage output is 7.2mV, then the snesor sensitivity can reach 14.4mV/V/kPa.

1.C. S. Smith, “Piezoresistance Effect in Germanium and Silicon,” Physical Review,Vol. 94, pp. 42-49, 1954.
2.C. S. Smith, “Semiconductor Sensors,” John Wiley & Sons Inc, New York, USA, 1994.
3.F. J. Morin, T. H. Geballe and C. Herring, “Temperature Dependence of the Piezoresistance of High-Purity Silicon and Germanium,” Physical Review, Vol. 105, pp. 525-539, 1957.
4.W. G. Pfann and R. N. Thurston , “Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects,” Journal of Applied Physics,Vol. 32, pp. 2008-2019, 1961.
5.O. N. Tufte, P. W. Chapman and Donald Long, “Silicon Diffused Element Piezoresistive Diaphragms,” Journal of Applied Physics, Vol 33, pp. 3322-3327, 1962.
6.O. N. Tufte and E. L. Stelzer, “Piezoresistive Properties of Heavily Doped n-Type Silicon,” Phys. Rev. 133, pp. A1705 - A1716, 1964.
7.C.M. Gieles,“Subminiature silicon pressure sensor transducer,” Digest IEEE international solid-state circuits conference, Philadelphia, PA, Feb. 19-21, pp. 108-109 , 1969.
8.S. K. Clark and K. D. Wise, “Pressure sensitivity in anisotropic ally etched thin diaphragm pressure sensors,” IEEE Transactions on electron devices, Vol. 26, No. 5, pp.1887-1896, 1979.
9.K.E. Petersen, “Sillicon as a Mechanical material,” Proceeding of the IEEE, Vol.70, No. 5, pp. 420-457, 1982.
10.Y.Z. Kanda “A Graphical Representation of the piezoresistance coefficients in silicon,” IEEE transactions on electron devices, Vol .29, No.1, 1982.
11.H.Guckel and D. Burns, “Planr Processed Polysilicon Sealed Cavities for pressure Transducers Array,” IEDM, pp.223-225, 1984.
12.P.J. French and A.G.R. Evans, “Polycrystalline silicon as a strain gauge material,” J. Phys. E 19, pp. 1055-1058, 1986.
13.P.J. French and A.G.R. Evans, “Piezoresistance in polysilicon and its applications strain gauges,” Solid State Electronics, Vol. 32, pp. 1-10, 1989.
14.S.Susumu and K. Shimaoka, “Surface Micromachined Micro Diaphragm Pressure Sensors,” Solid State Sensors and Actuators, pp. 188-191, 1991.
15.V. Mosser and J. Suski, J. Goss, “Piezoresistive pressure sensors based on polycrystalline silicon,” Sensor and Actuators A, Vol. 28, pp. 113-132, 1991.
16.E.Obermeier and P.Kopystynski, “Polysilicon as a material for microsensor applications,” Sensor and Actuators A, Vol. 30, pp. 149-155, 1992.
17.V.A. Gridchin, V.M. Lubimslq and M.P. Sarina, “Piezoresistive properties of polysilicon films,” Sensors and Actuators A, Vol.49, pp. 67-72, 1995.
18.L.W.Lin, H.C.Chu and Y.W.Lu, “A simulation program for the sensitivity and linearity of piezoresistive pressure sensors,” Vol. 8, pp. 514-522, 1999.
19.T. Pancewicz , R Jachowicz, Z. Gniazdowski , Z. Azgin ,P.Kowalski , “The empirical verification of the FEM model of semiconductor pressure sensor,” Sensors and Actuators A , Vol. 76, pp. 260-265(6) ,1999.
20.M.H.Bao and Y.P.Huang, “Batch derivation of piezoresistive coefficient tensor by matrix algebra,” J. Micromech. Microeng. 14, pp. 332-334, 2004.
21.蓋永鋒，“微型壓阻式壓力感測器製作之研究”，國立成功大學工程科學研究所碩士論文，2000。
22.陳丕宇，“應用MEMS 微型壓力感測器於風洞實驗之研究”，國立成功大學航空太空工程研究所碩士論文，2001。
23.陳景欣，“體型加工微機械感測器之設計與類LIGA製程技術之研發”，國立成功大學機械工程學系博士班論文， 2001。
24.李仲祥，“SOI晶片製作共振式水下聲響感測器之研究”，國立成功大學造船及船舶機械工程研究所碩士論文，2004。
25.蔣信男，“矽質微型壓阻式壓力感測器之遲滯現象研究”，國立清華大學動力機械工程學系碩士論文， 2005。
26.李協宇, “單次深層反應式離子蝕刻技術製造水下聲響感測元件之研究”， 國立成功大學造船及船舶機械工程研究所碩士論文， 2006。
27.S. D.Senturia, “Microsystem Design,” Kluwer Academic Pub, 2000.
28.T.R. Hsu, “Mems and Microsystems Design and Manufacture,” McGraw-Hill, 2001.
29.楊龍杰，“認識微機電” ，滄海書局，民國90年。
30.行政院國家科學委員會精密儀器發展中心，“微機電系統技術與應用” ，精密儀器發表中心，民國92年。
31.Q.Wang and Wen H.Ko, “Modeling of touch mode capacitive sensors and diaphragms,” Sensors and Actuators A ,Vol. 75, pp. 230-241, 1999.
32.周卓明，“壓電力學”，全華科技圖書股分有限公司，民國92年。
33.吳勇箴, “剪力式壓電噴頭設計研究”， 國立成功大學航空太空工程研究所碩士論文，2006。
34.J.D.Plummer, M. D.Deal and P.B.Griffin, “Silicon VLSI Technology,” Prentice Hall, 2000.
35.M.H.Bao, “Micro Mechanical transducers Pressure Sensors,” Elsevier Science Ltd, 2000.
36.林世政, “水下壓阻式微感測器特性測試及應用”，國立成功大學造船及船舶機械工程研究所碩士論文，2006。
37.J.N.Reddy, “An Introduction to the Finite Element Method,” Mc-Graw Hill, third edition, 2006.
38.李輝煌， “ANSYS工程分析基礎與觀念” ， 高立圖書有限公司，民國94年。
39.王柏村，“電腦輔助工程分析之實務與應用” ，全華科技圖書股分有限公司，民國94年。
40.劉晉奇、褚晴暉， “有限元素分析與ANSYS的工程應用” ，滄海書局，民國95年。
41.ANSYS. ANSYS Online Documentation,, SAS IP Inc., USA,ANSYS Inc. Coupled-Field Analyses, 2007.
42.C.Liu, “Foundations of MEMS,＂Pearson Prentice Hall , 2005.
43.ANSYS. ANSYS Online Documentation, SAS IP Inc., USA,ANSYS Inc. Element Reference, 2007.