遲滯效應為鈣鈦礦發光二極體發展阻礙的重要因素之一，而遲滯現象的表現來自於離子遷移效應，本論文我們提出元件運作在偏壓的條件下，大量的離子會被驅動至介面上累積的理論模型，並利用電容量測驗證離子的移動，同時也證明離子添加劑氯化膽鹼能夠鈍化MAPbI3鈣鈦礦薄膜的表面缺陷進而改善元件的輻射複合率及發光效率，並減少元件內部的離子遷移使得遲滯現象被抑制，最後比較了MAPbI3與MAPbBr3元件的電容變化證實碘離子相比於溴離子較不易遷移。

High efficiency perovskite light-emitting diode is a topic in content. However, there is an important factor is hindering it, that is the hysteresis effect. The hysteresis phenomenon mostly comes from the influent of the ion migration. As a result, we propose the theoretical model that halide ions from perovskite active layer can be driven to the interface cumulative when the device operates under a bias voltage and the capacitance measurement is a powerful solution to verify these ions. In additional, we proved that the ionic additive choline chloride is able to passivate the defects in surface of the MAPbI3 perovskite film. By that, the radiation recombination rate and luminous efficiency of the device are improved while the ion migration is minified, thereby the hysteresis phenomenon has been suppressed, respectively. Finally, comparing the capacitance changes of MAPbI3 and MAPbBr3 elements, it is confirmed that iodide ions are harder to migrate than bromide ions.

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