本研究首度使用無電鍍(EP)技術分別在砷化鋁鎵(Al0.24Ga0.76As)與磷化銦鎵(In0.49Ga0.51P)兩種摻雜磊晶膜基材上沉積鈀膜，以製備鈀閘極高電子移動率電晶體(High-Electron-Mobility Transistor, HEMT)作為氫氣感測器，並探討無電鍍三端電晶體元件的電性特性與氫氣感測表現。另外，根據本文所提出之氫氣吸附模式，利用穩態與暫態量測所得之結果求出熱力學及動力學參數。
研究結果顯示，無電鍍技術可成功運用於三端元件閘極之製備，由I-V電性分析，無電鍍製備鈀/砷化鋁鎵與鈀/磷化銦鎵電晶體之鈀電極能有效控制空乏層，擁有良好的電流控制能力。所得之臨限電壓值分別為8.68x10-3 V與-1.1 V，而線性區轉移電導最高值分別在閘極偏壓( )0.66 V與0.34 V位置為174.9 mS/mm與116.6 mS/mm ( =2.0 V時)。在氫氣感測表現上，鈀/砷化鋁鎵電晶體偵檢範圍為5 ppm ~ 1 % H2/N2，溫度操作範圍在303 ~ 363 K。由於砷化鋁鎵基材被鍍浴侵蝕，造成結構的破壞，導致氫氣感測性能較差。至於鈀/磷化銦鎵電晶體則具備極佳之氫氣感測表現，有低偵測極限(<5ppm)、寬廣偵檢範圍( 5 ppm ~ 1 % H2/air )、感測再現性佳；吸附與脫附速率迅速( 303 K、1% H2/air下， =9 s， =35 s )、操作溫度範圍廣( 303 K~503 K )。因此，本元件具備開發為多用途高性能氫氣感測元件之潛力。

In this dissertation, the electroless plating (EP) technique was employed to deposit palladium film on doped epitaxial Al0.24Ga0.76 As and In0.49Ga0.51P substrates, respectively, for fabrication of palladium gate pseudomorphic high-electron-mobility transistors (pHEMTs) as hydrogen sensors. Studies on the EP/Al0.24Ga0.76As and EP/In0.49Ga0.51P sensor transistors were focused on based on the proposed hydrogen adsorption model, investigations of I-V characteristics and hydrogen sensing performances. In addition, the thermodynamic and kinetic parameters of the adsorption reaction were estimated from the steady-state and transient analyses.
From experimental results, the Pd gate of three-terminal devices were successfully fabricated by the electroless plating method. Both of the studied EP Pd/Al0.24Ga0.76As and EP Pd/In0.49Ga0.51P devices which can effectively modulate the thickness of depletion region exhibit superior current control ability. The values of threshold voltages are 8.68x10-3 V for the EP Pd/Al0.24Ga0.76As device, and -1.1 V for the EP Pd/In0.49Ga0.51P device, respectively. Besides, the corresponding transconductance is 174.9 mS/mm for the former at applied gate bias of 0.66 V, and is 116.6 mS/mm for the latter at bias of 0.34 V, respectively. From studies of hydrogen sensing performances, the EP Pd/Al0.24Ga0.76As device can be worked under hydrogen concentrations ranging from 5 ppm to 1 % H2/N2, and temperature range of 303~363 K. However, for the Pd/Al0.24Ga0.76As device, the sensing performance is deteriorated due to the etching of Al0.24Ga0.76As substrate by the plating solution. The EP Pd/In0.49Ga0.51P device demonstrates excellent hydrogen sensing performances, such as high hydrogen sensitivity, low detection limit (<5 ppm), wide detection range(5 ppm ~ 1 % H2/air), good reproducibility, rapid response and recovery rates( =9 s、 =35 s at 303 K and 1 % H2/air). Furthermore, the studied Pd/InGaP device can be worked at a wide temperature regime (303~503 K). Therefore, it is promising to further develop the Pd/In0.49Ga0.51P device as a versatile high-performance hydrogen sensor.

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