在半導體蝕刻製程中，蝕刻速率過快或過慢都容易造成晶圓在蝕刻過程中產生缺陷，進而影響到生產良率，為了改善這些問題，蝕刻參數的調控成為主要改善蝕刻速率的方法。
本研究主要目的在於找出最穩健的電漿蝕刻配方組合。電漿蝕刻製程參數有變壓耦合式電漿源、偏壓功率、壓力、氣體流量等，使用田口氏直交表實驗方法，來分析品質特性與調控參數的關係，其中以反應氣體之流量的影響最為顯著。
最後，成功地利用田口氏直交表實驗方法，調整對於品質特性有影響的參數，達到蝕刻速率最佳化之目的，使理想機能達到望目。

In semiconductor etching processes, the proper etching rate is vital since the too fast or slow etching rate is more likely to cause defects in the wafers during the etching process, thus affecting the production yield. To reach the desired etching rate, the etching parameters need to be regulated. The study is to find the most robust combination of plasma etching parameters for the setting etching rate. The process parameters include TCP power, bias power, pressure, gas flow rate etc. The Taguchi's Orthogonal arrays experimental method is used to analyze the relationship between the quality characteristic and the working parameters, where the effect of the gas flow rate is most significant. In the work, the optimized parameter combination to reach the wanted etching rate is obtained from the analysis and the combination is also verified to be able to acquire the desired etching rate.

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