本實驗利用電化學沉積法(electrochemical deposition)製程製備銻摻雜氧化鋅奈米結構。在循環伏安法確定沉積電位範圍的基礎上，探討了溶液濃度、沉積電位、溶液pH值、成長溫度等實驗參數對材料形貌、成份、晶化質量以及光學性質的影響，藉此確定最適合沉積取向銻摻雜氧化鋅奈米柱的實驗條件。在此基礎上於n型基板上沉積ZnO:Sb奈米柱，並測量它們的I-V特性曲線，以確認ZnO:Sb奈米柱與n型基板是否形成p-n接面。
研究結果表明：SbCl3濃度高於0.125mM，樣品中會生成Sb2O3，SbCl3濃度低於0.125mM，Sb2O3消失，但ZnO:Sb奈米柱的成長趨於稀疏、覆蓋率低；沉積電位低於-1V，奈米結構結晶質量下降，隨著電位的提高，奈米柱的（002）取向性變差，並有無規律奈米團簇產生；pH值為5時可形成六方奈米柱狀結構，pH值過低結晶性急劇惡化，易生成直徑超過300nm的巨型柱狀結構，pH值過高奈米結構的晶化質量和（002）取向性也均變差；沉積溫度低於70℃時，鋅離子的析出受到抑制，而只產生銻氧化物的結晶顆粒，隨著溫度的升高晶化質量和取向性隨之逐漸變好，但升至85℃、90℃，沉積速率加快導致結晶質量和取向性又再次惡化；ZnO種子層的存在有助於改善ZnO：Sb奈米柱的（002）取向性。
本研究總結得出的銻摻雜氧化鋅奈米柱的理想沉積條件為：ZnO的IBS薄膜作為種子層，SbCl3濃度為0.125mM、沉積電位為-1V、pH值為5、沉積溫度為75℃，沉積時間約一小時，可沉積獲得Sb摻雜量約3.51at.%，直徑約50nm，具有良好（002）取向性的ZnO：Sb奈米柱。
對ITO/ZnO種子層/ZnO nanorod和ITO/ZnO種子層/ZnO:Sb nanorod的I-V特性曲線測量結果表明：ITO/ITO、ZnO種子層/ZnO種子層、ITO/ZnO種子層的I-V特性曲線為線性，ITO/ZnO nanorod與ZnO/ZnO nanorod的I-V特性曲線為線性相關，這表明In電極與ITO和ZnO種子層，ZnO種子層與ITO和ZnO奈米柱均形成歐姆接觸；而ITO/ZnO:Sb nanorod與ZnO種子層/ZnO:Sb nanorod的I-V特性曲線均為整流趨勢，這表明銻摻雜氧化鋅奈米柱與n型基板形成p-n接面，從而證明Sb的摻雜成功獲得了p型ZnO。

In this research, ZnO:Sb nanostructures were prepared by electrochemical deposition. On the basis of the deposition potential range determined using cyclic voltammetry, the influences of SbCl3 solution concentration, deposition potential, pH value, and growth temperature on the morphology, composition, crystalline quality, and optical properties of ZnO:Sb nanostructures were studied systematically. The optimal deposition parameters for the textured ZnO:Sb nanorods were concluded accordingly and were adopted to deposit the ZnO:Sb nanorods on the n-type substrates. Then the I-V curves for these samples were measured to explore whether the p-n junctions were formed.
The research indicates that (1) the adoption of the SbCl3 solution with concentrations higher than 0.125 mM can result in the precipitation of Sb2O3, while the sparse single-phase ZnO:Sb nanorods can be obtained for the concentration lower than 0.125 mM. (2) For the deposition potentials of <-1V, the crystalline quality of the nanostructures was bad. With the potential increasing to >-1V, the (002) texture for the nanorod diminished gradually with the appearance of the irregular nanoclusters. (3) Nanorods with a hexagonal structure can be achieved at a pH value of 5. Lower pH value can result in lower crystalline quality and larger nanorods with diameters more than 300 nm, while both the crystalline quality and the (002) orientation deteriorated for the pH values higher than 5. (4) When the deposition temperatures below 70 ℃ were adopted, the formation of ZnO was limited and only the grains of Sb oxides were formed. With the increasing of deposition temperature, the crystalline quality and the texture of ZnO:Sb nanorods were improved gradually, But deteriorated again due to the increase of the deposition rate with the temperature increasing further to about 85℃. (5) The existence of ZnO seedlayer is helpful for improving the (002) orientation of ZnO:Sb nanorods.
Based on the detailed investigations, the optimal deposition parameters for the ZnO:Sb nanorod can be concluded as follows: (1) The ZnO film prepared by IBS deposition is used as seed layer；(2) The SbCl3 concentration, the deposition potential, the pH value, the deposition temperature, the deposition duration are determined as 0.125 mM, -1 V, 5, 75 ℃, and 1 hr, respectively. The (002) textured Zn96.5Sb3.5O nanorods with a diameter of roughly 50 nm were obtained by adopting these deposition parameters.
The I-V features of the ITO/ZnO seed layer/ZnO nanorod and the ITO/ZnO seed layer/ZnO:Sb nanorod were measured. It was found that the I-V dependences for ITO/ITO, ZnO seed layer/ZnO seed layer, and ITO/ZnO seed layer were totally linear and those of ITO/ZnO nanorod and ZnO seed layer/ZnO nanorod were basically linear, which indicates the ohmic contact of the In/ITO, In/ZnO seed layer, ZnO seed layer/ITO, ZnO seed layer/ZnO nanorod.However, the I-V curves of ITO/ZnO:Sb nanorod and ZnO seed layer/ZnO:Sb nanorod showed the rectifying tendency. This indicates that the ZnO:Sb nanorod/n-type substrates were p-n junctions and p-type ZnO were fabricated successfully through Sb doping.

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