本論文探討金屬硫化物(硫化鋅及硫化亞銅)一維奈米結構及鋅與氧化鋅共軸奈米線的成長及物理性質之研究。利用掃描式電子顯微鏡(SEM)觀察一維奈米結構的表面型態。而利用穿透式電子顯微鏡(TEM)探討奈米材料之微結構與成長機制。利用光激發光譜(PL)、陰極激發光譜(CL)及吸收光譜來進行光學性質的研究。同時利用物理性質量測系統(PPMS)量測單根奈米線之電性傳導行為。
本論文依研究主題可分為四個部分。首先利用矽及氮化鎵做基板，進行簡單的熱揮發沉積法可以成長出未摻雜及摻雜鎵之硫化鋅奈米線。未摻雜之硫化鋅奈米線成直條狀，而摻雜鎵之硫化鋅奈米線像是六角片狀堆疊起來的結構。而摻雜鎵之所以會長成六角片狀，則是由於摻雜鎵使硫化鋅的表面能產生變化，使奈米線傾向往側向成長。
第二部分，摻雜鎵之硫化鋅奈米線顯示了缺陷能階發光而取代了近能隙發光，而在電性傳導方面，摻雜鎵的硫化鋅奈米線則表現了極低的電阻率，並且在50K出現金屬半導體轉換的現象，最後使用亞甲基藍溶液所進行之光催化反應則顯示摻雜鎵的硫化鋅有著良好的光催化性質，推測是因為其特殊的表面型態造成表面積變大的關係。
第三部分，吾人利用簡單的化學氣相沉積法成功的成長出硫化亞銅立方晶奈米線，而奈米線成長方向是[211]且頂端有連接著氧化亞銅的顆粒，而陰極發光峰位於580nm，有可能是尺寸造成的量子侷限效應和氧化亞銅之近能隙發光，另外也有得到硫化亞銅的多面體，並發現其為超晶格所組合而成，而量測吸收光譜可得其能隙大約在1.6eV。
最後一個部分，a軸方向成長的鋅與氧化鋅奈米線可以利用直接熱揮發沉積的方式得到，而藉由添加催化劑錫，則可成長出c軸取向之鋅與氧化鋅奈米線，而兩種方向的奈米線發光光譜對照氧化鋅奈米管則都是藍移，此原因應該是由於鋅與氧化鋅界面殘留的應變所造成的，而變溫光譜則顯示兩者主要發光的位置不同，這有可能是因為不同成長平面所造成的。

This dissertation explores the growth and physical properties of metal sulfide (ZnS and Cu2S) nanostructures and Zn-ZnO core-shell nanocables. The surface morphologies of the samples were analyzed by scanning electron microscopy(SEM). The microstructures were characterized by transmission electron microscopy(TEM) to study the growth mechanisms. The optical properties were measured by photoluminescence(PL), cathodoluminescence(CL) and absorption spectra. The electron transport behaviors of single nanowires were investigated by physical properties measurement system(PPMS).
The main contact of this dissertation can be divided into four parts. First, a new process for growing single crystalline undoped and Ga-doped ZnS nanowires with simple evaporation and condensation procedures on Si and GaN, respectively, is introduced. The undoped ZnS nanowires exhibit an ordinary straight morphology, whereas the Ga-doped nanowires are composed of aligned hexagonal platelets. ZnS nanowires tend to grow in the lateral direction faster than axial direction due to the Ga dopant which is diffused into the ZnS lattices.
In the second part, cathodoluminescence(CL) results show that the dominant emission switches from near-band-edge emissions for the undoped ZnS nanowires to defect emissions for Ga-doped ZnS nanowires. The current-voltage results of the Ga-doped ZnS nanowires indicate low resistivity and exhibit the metal-semiconductor transition behavior at 50 K, in contrast to the semiconductor behavior of the undoped ZnS nanowires. By photocatalytic activity measurement with the methylene blue(MB) solution, we also demonstrate the excellent photocatalytic activity of Ga-doped ZnS nanowires which possess large surface area due to the unique morphology.
In the third part, single crystalline Cu2S nanowires in cubic phase were first successfully synthesized by using simple thermal chemical vapor deposition without catalysts purposely. The as-deposited Cu2S nanowires were grown along the [211] direction with Cu2O particles on the tips. Cathodoluminescence spectroscopy reveals an orange emission peak located at 580 nm, which may be originated from the near band edge emission of Cu2O particles or blue shift caused by the quantum confinement effect due to quite small size of the Cu2S nanowire. On the other hand, the Cu2S particles can also be obtained in our system.The Cu2S particles are consisted of unique superlattices and the band gap of the particles is about 1.6eV by studying the absorption spectrum.
In the last part, highly-aligned Zn-ZnO nanocables with growth directions along the [11 0] (a-plane) and [0001] (c-plane) were successfully synthesized via one-step thermal evaporation and condensation without and with Sn catalysts, respectively. Photoluminescence measurements show that the near-band-edge emissions of both types of Zn-ZnO nanocables are blue shifted compared to those of ZnO nanotubes without Zn cores due to compressive stress. Temperature-dependent PL spectra reveal that the dominant emissions at low temperature involve excitonic transitions in addition to blue shift, which are clearly related to the different growth planes.

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