與有機–無機混合型鈣鈦礦材料不同，全無機鹵化物鈣鈦礦（如 CsPbBr3）因具備優異的光電特性，近年來廣受關注，被視為極具潛力的發光二極體（LED）、雷射及其他光電元件材料。本研究中，我們採用化學氣相沉積（Chemical Vapor Deposition, CVD）技術，將 CsPbBr3 薄膜沉積於c-plane藍寶石基板上。然而，在大面積範圍內同時實現高結晶品質與優異均勻性，仍是一項相當具挑戰性的課題。
為解決此問題，我們系統性地調控晶體生長溫度、載氣流量及持溫時間等關鍵參數，以促進薄膜的連續成長與橫向擴展。透過光學量測分析不同生長條件下的結晶品質與載子壽命，並利用選區電子繞射（Selected-Area Electron Diffraction, SAED）證實薄膜為單晶結構。此外，在 355 nm 脈衝雷射激發下，薄膜展現明顯的雷射行為，顯示其具備優異的光學共振特性，可作為雷射共振腔的有效增益介質。
進一步地，我們利用聚焦離子束顯微鏡（Focused Ion Beam, FIB）對大面積 CsPbBr3薄膜進行微結構圖案化製作，並透過後續光學分析，初步驗證其作為微型雷射共振腔元件的應用潛力。

Unlike hybrid organic–inorganic perovskites, all-inorganic halide perovskites such as CsPbBr3 have attracted considerable attention in recent years due to their excellent optoelectronic properties, making them promising candidates for applications in light-emitting diodes (LEDs), lasers, and other optoelectronic devices. In this work, CsPbBr3 thin films were deposited onto c-plane sapphire substrates via chemical vapor deposition (CVD). Nevertheless, achieving large-area CsPbBr3 thin films with high crystallinity and uniformity remains a significant challenge.
To address this issue, we systematically tuned key growth parameters—including growth temperature, carrier gas flow flux, and keeping time—to promote continuous film growth and lateral expansion. The crystallinity and carrier lifetime under different growth conditions were evaluated through optical characterization, while the single crystallinity of the films was confirmed by selected-area electron diffraction (SAED). Furthermore, under excitation by a 355 nm pulsed laser, the films exhibited distinct lasing behavior, confirming their excellent optical resonance characteristics and suitability as gain media for laser resonators.
In addition, large-area CsPbBr3 thin films were patterned into microstructures using focused ion beam (FIB) milling. Subsequent optical measurements provided preliminary insights into their potential for integration as micro-laser resonator components.

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