在本篇研究中，以水熱法在FTO基板上成長ZnSnO3奈米柱狀並結合SnO奈米顆粒以提升複合材料在可見光下的光催化表現。從TEM的NBDP及HRTEM結果中發現ZnSnO3由(104)、(110)和(214)面構成，而在複合材料中可以觀察到奈米顆粒附著在柱狀表面，進一步從NBDP及HRTEM分析中得知SnO及SnO2同時存在奈米顆粒中，代表在此製程中仍有部分雜相存在。透過XPS鍵結能的偏移證實ZnSnO3-SnO確實成功製成，另外，在Sn元素的分析也證實除了來自ZnSnO3及SnO的訊號外，也有部分SnO2貢獻。在UV-vis量測中得知ZnSnO3能隙為4 eV，而SnO能隙為2.1 eV。由Mott-Schottky斜率可知ZnSnO3為n-type而SnO為p-type，證實pn junction成功合成，並進一步整合UV-vis、Mott-Schottky及UPS繪製能帶圖。從PFM分析ZnSnO3的壓電係數(d33)大約為15.13 pm/ V。最後，在光降解中，分別探討RhB濃度及體積對降解效率的影響，發現在5ppm、5 mL具有優異的表現，其降解反應常數為12 × 10-3 min-1。由能帶圖得機制可以得知，p-n界面的電場確實能幫助電子的遷移，因此證明透過p-type SnO的結合確實可提升ZnSnO3在可見光下的應用。

A p-SnO/n-ZnSnO3 heterojunction film was fabricated on fluorine-doped tin oxide (FTO) substrate through hydrothermal processes to enhance the photocatalytic performance under visible light illumination. The TEM analysis indicated the fabrication of single-crystal ZnSnO3 nanorods and SnO and SnO2 nanoparticles. The XPS results revealed all of the constituent elements with desirable valence states and the binding energy shift for the ZnSnO3-SnO composite, indicating the formation of the heterostructure. The result also revealed the impurities of SnO2 (approximately 37 %). The UV-vis analysis determined the band gaps of the ZnSnO3 and SnO of approximately 4 and 2.1 eV, respectively. Mott-Schottky measurement determined the n-type ZnSnO3, p-type SnO, and p-n junction for the composite. An energy band diagram was constructed on the basis of UV-vis and UPS measurements. The PFM results validated the piezoelectric coefficient (d33) of approximately 15.13 pm/V for the ZnSnO3. The photodegradation of various concentrations and volumes of RhB triggered by the sample was studied and the most promising degradation rate constant (k) was approximately 12 × 10-3 min-1. This was attributable to the induced built-in electric filed in the p-n junction, which improved the migration of photoinduced charge carriers.

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