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研究生： 王羿凱
Wang, Yi-Kai
論文名稱： ScAlN/ZnO/DLC/Si多層結構應用於表面聲波元件之壓電及溫度飄移係數研究
Study on piezoelectricity and TCF of ScAlN/ZnO/DLC/Si multilayer structure applied for surface acoustic wave device
指導教授： 黃肇瑞
Huang, Jow-Lay
共同指導: 齊孝定
Qi, Xiao-ding
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2021
畢業學年度： 109
語文別： 中文
論文頁數： 96
中文關鍵詞： 表面聲波元件 、類鑽碳 、氮化鈧鋁 、氧化鋅 、壓電係數 、機電耦合係數 、溫度飄移係數
外文關鍵詞： surface acoustic wave, diamond-like carbon, scandium aluminum nitride, zinc oxide, piezoelectric coefficient, electromechanical coupling coefficient, temperature coefficient of frequency
相關次數： 點閱：166  下載：0 
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    • 由於 5G 通訊的蓬勃發展，應用於通訊設備中的濾波器也被大量研究，目的是朝著高頻段、高機電耦合係數以及優良的溫度頻率穩定性發展；並以多層結構、結合不同材料之優點來得到各項性質提升的表面聲波元件，拓寬其應用範圍。本研究將以IDT/ScAlN/ZnO/DLC/Si之多層結構來增進元件之表現。類鑽碳/矽基板具有比傳統單晶基板優良的相速，且散熱較好，製程相較鑽石基板容易且成本較低，並可與半導體製程整合；氧化鋅及氮化鋁為著名之壓電材料，在先前研究中已證實鈧的摻雜可以使壓電係數(d33)大幅提昇，有利於元件之 K2 值提升，除此之外，氧化鋅及氮化鈧鋁互補之溫度飄移係數可提升元件之頻率溫度穩定性。
    將氧化鋅薄膜利用反應性磁控濺鍍系統沉積在類鑽碳基板上，找出具有最佳壓電性質之沉積參數，結果顯示當靶材功率為110W、氣體流量Ar/O2=5時會得到性質最好的氧化鋅壓電薄膜，其主要原因為C軸結晶性；接著利用反應性雙靶磁控濺鍍氮化鈧鋁薄膜於氧化鋅薄膜之上，改變鈧的摻雜量，找出具有最佳壓電性質的多層結構，結果顯示當鈧靶材瓦數為100 W，也就是鈧摻雜濃度為35 wt% 時，達到最高的d33為30.57 pm/V，這是因為薄膜結構產生轉變，且應變造成的晶格扭曲程度最大而使壓電係數達到最大值。進一步將ScAlN/DLC/Si結合不同厚度之氧化鋅薄膜，製作成表面聲波元件。結果顯示，加入氧化鋅層之表面聲波元件可有效提升K2並改善TCF。隨著氧化鋅厚度增加至250 nm，TCF表現最接近0，約為13.68 ppm/℃，而K2值可達9.02 %，並且相速為10019 m/s，顯示此材料具有應用於高頻、高機電耦合係數、及高溫度穩定性表面聲波元件之潛力。

    We report a high electromechanical coupling coefficient (K2) and low temperature coefficient of frequency (TCF) surface acoustic wave (SAW) devices on ScAlN/ZnO/DLC/Si structure. The XRD result of ZnO films showed highest c-axis (002) orientation and d33 achieve maximum value when the ZnO target power is 110 W and Ar/O2 ratio is 5. The ScxAl1-xN films XRD result showed high c-axis (002) orientation and tilting with ZnO/DLC/Si in SEM image. The highest piezoelectric coefficient (d33) value of 30.57 pm/V was achieved when Sc power is 100 W. The Vsaw of ScAlN/ZnO/DLC/Si can up to 10000 m/s. The K2 of SAW device based on ScAlN/ZnO/DLC/Si with 250 nm ZnO thickness is 9.02%, which is two times larger than the structure without ZnO (4.21%). As the ZnO films thickness increase, the TCF gradually decrease close to zero. When the thickness of ZnO is 350 nm, the TCF change from positive to negative. The ScAlN/ZnO/DLC/Si structure has great potential in high-temperature stability and high frequency SAW devices.

    摘要 I Extended Abstract II 致謝 XX 總目錄 XXI 圖目錄 XXV 表目錄 XXX 第1章 緒論 1 1-1 前言 1 1-2 研究動機與目的 2 第2章 文獻回顧 6 2-1 濺鍍 6 2-2 壓電性與壓電係數d33 10 2-3 表面聲波元件 13 2-3-1 表面聲波介紹 13 2-3-2 表面聲波濾波器(SAW Filter) 14 2-3-3 表面聲波相速(Vp) 15 2-3-4 機電耦合係數(K2) 15 2-3-5 溫度飄移係數(TCF) 16 2-4 表面聲波元件材料 17 2-4-1 類鑽碳(DLC)膜之結構與特性 17 2-4-2 氧化鋅薄膜 19 2-4-3 氮化鋁薄膜 21 2-4-4 氮化鈧鋁合金薄膜 23 第3章 研究方法與實驗步驟 27 3-1 實驗流程 27 3-2 實驗材料 27 3-3 濺鍍設備 29 3-4 金屬蒸鍍設備 30 3-5 鍍膜步驟與條件 31 3-5-1 基板前處理 31 3-5-2 氧化鋅濺鍍流程 31 3-5-3 氮化鈧鋁濺鍍流程 31 3-5-4 蒸鍍流程 32 3-6 薄膜性質分析 34 3-6-1 薄膜晶體結構分析 34 3-6-2 薄膜表面及橫截面微結構觀察 35 3-6-3 表面粗糙度分析 35 3-6-4 成分與化學鍵結分析 36 3-6-5 薄膜壓電特性分析 37 3-7 表面聲波元件製作 39 3-8 表面聲波元件量測 43 第4章 結果與討論 45 4-1 商用類鑽碳/矽基板之特性分析 45 4-1-1 晶體結構分析 45 4-1-2 表面粗糙度分析 45 4-1-3 化學鍵結分析 45 4-2 改變瓦數之氧化鋅薄膜特性分析 49 4-2-1 晶體結構分析 49 4-2-2 薄膜表面形貌分析 49 4-2-3 薄膜壓電性質分析 53 4-3 改變Ar/O2流量比之氧化鋅薄膜特性分析 55 4-3-1 晶體結構分析 55 4-3-2 薄膜表面形貌分析 56 4-3-3 薄膜壓電性質分析 60 4-4 氮化鈧鋁薄膜沉積於氧化鋅薄膜之特性分析 61 4-4-1 化學成分分析 61 4-4-2 晶體結構分析 64 4-4-3 薄膜表面形貌及橫截面微結構分析 69 4-4-4 TEM橫截面微結構分析 70 4-4-5 壓電性質分析 76 4-5 表面聲波元件特性分析 78 4-5-1 表面聲波相速與機電耦合係數 78 4-5-2 溫度飄移係數 85 第5章 結論 87 參考文獻 89

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