積體電路製造技術的尺寸縮小化能改善元件的切換速度與消耗功
率，增加電路之元件積成密度也使得晶片整合功能性更加豐富。然而隨著
生產技術邁入奈米階段，金氧半電晶體的性能無法光靠尺寸微小化來達
到，傳統的光學微影也大於關鍵尺寸，若是要繼續微縮，就必須在改善遷
移率的應力製程技術以及元件結構著手。另一方面如何藉由奈米金以及高
分子刷的成長技術應用在元件結構，藉以改善傳統的製程的不足。本論文
主要分為三個部份，其一為利用奈米金的自組裝行為來製造有機場效電晶
體（OFET）電極，我們發展出藉由在矽晶片上奈米金自組裝金圖案的新穎
方法。結合了軟微影及自組裝技術製造圖案，不再需要傳統的曝光以及蝕
刻步驟就可以得到奈米級的奈米金圖案，結果顯示與傳統製程製造出的電
晶體具備相似的特性，奈米金更有製備軟性電子之潛力。第二部分我們利
用微影製程與原子轉移自由基聚合反應，得到400 nm 解析度之聚苯乙烯
二維柱陣列的有機揮發物質感應器，我們測量浸泡過水與甲苯溶劑聚苯乙
烯二維週期性浮式光柵之AFM 以及水靜態接觸角來證實其表面結構隨著溶
劑極性指標變化：最後我們使用應變矽鍺與覆蓋氮化矽接觸孔蝕刻停止層
探討互補式金氧半導體的特性。藉由結合壓縮應力的矽鍺層與具有壓縮、
伸張應力的氮化矽層，P 型與N 型金屬氧化物半導體皆可以得到改善的電
流輸出特性。此應力層的使用也改良了臨界電壓下滑的問題與短通道效
應。對N 型金屬氧化物半導體來說，當使用伸張應力氮化矽層，比起傳統
的製程方式的界面陷井密度可以改善32%。藉由此研究我們也歸納出從壓
縮應力氮化矽層出來的氫原子是影響負偏溫度不穩定性與熱載子注入等
可靠度的關鍵因素。

The capabilities of device scaling can improve operation performance.
However device scaling has facing serious problems in tool capability limitation and material innovations. Thus mobility enhancement technologies have been developed for advanced devices. The study also focus on alternative
patterning approach to fabricate naon-scale features via direct self-assembly of polymers and gold nano particle. In first section, we developed an integrated process involving soft lithography and self-assembly to fabricate patterns of
sub-micrometer AuNPs without the traditional lithography and etching processes. The five-layer structures that we employed as nanoscale metal electrodes in the fabrication of organic field effect transistors (OFETs), which exhibited output characteristics similar to those of corresponding OFETs prepared using traditional processing. In secondary section we used advanced lithography and oxygen plasma treatment to generate well-defined 400
nm-resolution hole array of polystyrene (PS) which was successively grafted from the bottom layer of initiator by atom transfer radical polymerization (ATRP). The two-dimensional periodic relief grating (2DPRG) of the tethered
VPS after immersion in solvents possessing various polarities present solvent-responsive properties in static water contact angles (SWCAs) and effective refractive indices (neff). The neff of the 2DPRG of tethered PS after
immersion in water and toluene are 1.46 and 1.39 respectively. These reversibly properties created from a reversible conformational change of 2DPRG of tethered PS exhibited switching property in change of solvent
polarity. In last section, we investigated on a nano-scale complementary metal–oxide–semiconductor field-effect transistor (CMOSFET) fabricated by local strained techniques with epitaxial SiGe and high mechanical stress SiN as contact etch stop layer (CESL). The Ion gain is 71.3% for PMOS with SiGe S/D plus compressive CESL layer and when processing tensile film on NMOS,the drive current can be improved by 42.8%. For short channel effect, strain
scheme also show beneficial results based on Vt-roll off performance.Furthermore when capping a strained tensile film, the interface trap density for NMOS could lower down 32% comparing to control Si from charge pumping current measurement. The impact of these stressor schemes on device
reliability have been studied to conclude that the hydrogen from compressive SiN is the key for reliability performance.

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