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研究生： 羅布諾
Rao, Bruno
論文名稱： 利用氧化鋅多層同質接面結構開發直流壓電奈米發電機
Development of DC piezoelectric nanogenerators based on ZnO homojunction multilayers
指導教授： 劉全璞
Liu, Chuan-Pu
學位類別： 碩士
Master
系所名稱： 工學院 - 材料科學及工程學系
Department of Materials Science and Engineering
論文出版年： 2021
畢業學年度： 109
語文別： 英文
論文頁數： 68
外文關鍵詞： DC voltage, Doping, Device Fabrication, Flexible Substrates, Piezopotential, Stainless-Steel
相關次數： 點閱：88  下載：0 
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    • In this work, we investigate the piezoelectric performance enhancement of p-n homojunctions created by deposition of alternating Zinc Oxide (ZnO) thin films with Nitrogen dopant. We use RF magnetron sputtering to deposit various configurations of ZnO on Silicon and flexible Stainless-Steel substrates. We start the investigation with deposition of a single layer Nitrogen (N2) doped ZnO thin film to dual and multiple layer alternating Nitrogen (N2) doped ZnO on undoped ZnO with a continuous deposition process (without breaking vacuum). The main purpose of the investigation was on depositing multiple thin films of ZnO with different dopants to form multiple p-n junctions. To achieve N2 doping Nitrogen gas was introduced into the sputtering chamber along with Argon as a reactive gas. We have demonstrated successful growth of multiple p-n homojunctions of ZnO thin films on Nitrogen doped ZnO thin films with proper c-axis (polar direction) oriented columnar structure and minimum surface roughness. We were able to achieve a sustained 1.2V – 1.5V DC voltage on the best configurations without any external rectification circuit. The study entails simple and easy fabrication of high output DC PENGs without the need of external rectifying circuits which can lead to reduction in costs, weight, and complexity of fabrication.

    Abstract i Acknowledgement ii Table of Contents iii List of Figures vi List of Tables x Chapter 1 Introduction 1 1.1 Overview 1 1.2 Motivation 1 1.3 Objectives 3 Chapter 2 Theory 4 2.1 Crystalline Materials 4 2.2 Semiconductors 5 2.2.1 Energy bands 5 2.2.2 Intrinsic and Extrinsic Semiconductors 8 2.3 Epitaxial growth of semiconductor thin films 9 2.4 Zinc Oxide 10 2.4.1 Crystal structure 10 2.4.2 Electronic properties and defects 11 2.5 P-type ZnO 12 2.6 Previous work 13 Chapter 3 Experimental Method 15 3.1 Sputtering 15 3.2 Characterization Equipment 16 3.2.1 X-Ray Diffraction 16 3.2.2 θ/2θ Scan 18 3.2.3 Atomic Force Microscopy 19 3.2.4 Ultrahigh Resolution Scanning Electron Microscope (UHR-SEM) 21 3.2.5 Energy Dispersive spectrometer (EDS) 23 3.2.6 Hall effect measurements 23 3.2.7 Raman spectroscopy 25 3.3 Equipment used 27 3.3.1 Magnetron Sputter 27 3.3.2 PECS 27 3.3.3 XRD 27 3.3.4 AFM 27 3.3.5 SEM and EDS 27 3.3.6 Hall Effect Measurements 27 3.3.7 Electrical characterization 27 Chapter 4 Results 28 4.1 Sputtering 28 4.1.1 Substrate Preparation 28 4.1.2 Deposition 28 4.2 Structural Characterization 30 4.2.1 X-Ray Diffraction 30 4.2.2 Atomic Force Microscopy 33 4.2.3 Ultrahigh Resolution Scanning Electron Microscopy 35 4.2.4 Energy Dispersive Spectrometer 39 4.2.5 RAMAN Spectroscopy 42 4.3 Electrical Characterization 43 4.3.1 Hall Effect Measurements 43 4.3.2 IV Measurements 44 4.3.3 Output Voltage Measurements 45 4.3.4 Output Current Measurements 49 4.4 Long Term Stability Study 51 4.4.1 Atomic Force Microscopy 51 4.4.2 Scanning Electron Microscopy 53 4.4.3 Energy Dispersive Spectrometer 55 4.4.4 Output Voltage Measurements 56 Chapter 5 Discussion 57 5.1 Reduction in electron screening effect 57 5.2 Decrease in overall capacitance 58 5.3 p-n junction (DC behavior) 58 5.4 Constant voltage 58 5.5 Band Diagram 59 5.6 Mechanism 60 Chapter 6 Conclusion 62 Chapter 7 Future Work 63 References 64

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