研究生: |
王俊凱 Wang, Chun-Kai |
---|---|
論文名稱: |
氮化鎵系列光電及微波元件之研究 The Study of Nitride-based Optoelectronics and Microwave Devices |
指導教授: |
蘇炎坤
Su, Yan-Kuin 張守進 Chang, Shoou-Jinn |
學位類別: |
博士 Doctor |
系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
論文出版年: | 2006 |
畢業學年度: | 94 |
語文別: | 英文 |
論文頁數: | 159 |
中文關鍵詞: | 鎢 、帶通紫外光檢測器 、氮氧化矽 、二氧化矽 、低頻雜訊 、光激化學氣相沉積法 、金氧半異質接面場效電晶體 、氮化鎵 、鎢化鈦 、金半金型紫外光檢測器 |
外文關鍵詞: | SiNxOy, SiO2, photo-CVD, MOS-HFETs, TiW, W, band-pass UV photodetectors, low frequency noise, GaN, MSM UV photodetectors |
相關次數: | 點閱:113 下載:0 |
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本論文主要為研製並分析氮化鎵材料系列光電及微波元件,其中可分為紫外光檢測器及金氧半場效電晶體兩大部分。
首先在紫外光檢測器方面,鎢化鈦及鎢金屬的透明度在入射光波長為 300 nm 時分別可高達75.1%及65.4%。以鎢化鈦及鎢金屬製作出的金半金型紫外光檢測器最大峰值光響應分別為0.192 A/W 與0.15 A/W,相對的最大量子效率則分別為66.4%及51.8%。特別是元件在UV-B 波段的光響應,由於接觸電極透明度的大幅提升而獲得相當高的響應值,因此改善了原本ITO、TiN、RuO2 及IrO2 等透明金屬電極元件光響應在此波段範圍嚴重退化的缺點。另外,金半金型紫外光檢測器的低頻雜訊表現為1/f 型式,進而推算出元件的最低雜訊等效功率及最高檢測度則分別為1.987×10-10 W及6.365×109 cmHz0.5W-1。另一方面,我們利用p-Al0.1Ga0.9N 作為入射光子阻障層成功地研製出p-i-n 型的帶通紫外光檢測器,可以有效地檢測出UV-A 波段。其中以厚度為300 nm 的p-Al0.1Ga0.9N 光子阻障層顯示出最優越的帶通光響應圖,其光響應峰值為0.13 A/W,相對的量子效率為46%。另外,p-i-n 型帶通紫外光檢測器的低頻雜訊表現屬於熱雜訊,推算出元件的最高檢測度則為8.22×1013 cmHz0.5W-1。
至於在氮化鋁鎵/氮化鎵金氧半異質接面場效電晶體方面,我們利用光激化學氣相沉積法成長出高品質的二氧化矽薄膜,有效地降低超過四個數量級的閘極漏電流。室溫下最大飽和電流、最大轉導值及閘極操作平台分別為633 mA/mm、90 mS/mm 及7.5V。即使在高溫300oC 的操作環境溫度下,仍保有相當合理的元件電特性,顯示出以光激化學氣相沉積二氧化矽作為金氧半場效電晶體的氧化絕緣層確實可以應用於嚴苛的操作環境下。此外,電晶體電特性在高溫下的退化現象主要機制是源自於載子的飽和速度隨著溫度升高而導致退化相關。
關於場效電晶體元件低頻雜訊的分析,在線性區操作偏壓下,元件的雜訊表現為1/f 型式的雜訊,推算出虎克係數約為10-3。而且當閘極偏壓為-4V < Vgs < 0V 時,元件雜訊正比於Vgs-1,分析出雜訊的產生來源為閘極底下的通道區域。反觀當偏壓為0V < Vgs < 4V 時,元件雜訊與閘極電壓無關,此時雜訊產生於非閘極底下的通道區域。至於在飽和區方面,元件的雜訊表現屬於退化型1/f 的雜訊,並推測出元件雜訊產生的原因與氧化層內的缺陷狀態能量分佈有關。另外,我們也利用了氮化鋁鎵/氮化鎵/氮化鋁鎵雙異質接面結構確實地改善了之前結構在電特性及雜訊方面的表現,其中最大飽和電流及閘極操作平台分別可高達755 mA/mm 及8V,雜訊中的虎克係數可以大幅地降低至2.95×10-4。
論文最後我們再利用光激化學氣相沉積法成功地成長出高品質的低溫氮氧化矽及室溫二氧化矽。低溫氮氧化矽的折射率介於1.65~1.7 之間,且表面粗操度的均方根值只有0.845 nm。以此氧化層製作出的電容具有極優越的崩潰電場,可高達13MV/cm,且具有相當低的介面狀態密度,為1.04×1011 cm-2eV-1。另外,室溫的二氧化矽薄膜也具有相當不錯的物理、化學及電特性。顯示出以光激化學氣相沉積的低溫氮氧化矽及室溫二氧化矽都非常地有潛力被應用於金氧半場效電晶體的氧化絕緣層。
The main goal of this dissertation is the fabrications and analyses of nitride-based optoelectronics and microwave devices. Hence, the dissertationis divided into two parts, one is the investigation of nitride-based UV photodetectors, and the other is that of nitride-based metal-oxidesemiconductor heterostructure field effect transistors (MOS-HFETs).
For metal-semiconductor-metal (MSM) UV photodetectors, two kinds of transparent electrodes, titanium tungsten (TiW) and tungsten (W) were studied. The transmittance of TiW and W were 75.1% and 65.4% at a wavelength of 300 nm, respectively. Then, the 0.192 A/W for TiW and 0.15
A/W for W peak responsivity of our detectors corresponded to the maximum quantum efficiency of 66.4% and 51.8%, respectively, at 360 nm. It should be noted that transmittance of TiW and W films only decreased very slightly and improved the responsivity in the UV-B range compared with other transparent contact electrodes, such as ITO, TiN, RuO2, and IrO2. On the other hand, the noise behavior of MSM UV photodetectors was 1/f-type noise. The minimumnoise equivalent power (NEP) and maximum detectivity (D*) was calculated to be 1.987×10-10 W and 6.365×109 cmHz0.5W-1, respectively.
In addition, the nitride-based p-i-n band-pass photodetectors with a p-Al0.1Ga0.9N blocking layer, which were designed to detect the UV-A range,
were fabricated and characterized. The device with a 300 nm-thick p-Al0.1Ga0.9N layer showed the best characteristic for response. The peak responsivity was estimated to be around 0.13 A/W corresponding to a quantum efficiency of around 46%. On the other hand, the noise behavior of p-i-n band-pass photodetectors was thermal noise, and maximum D* was calculated to be 8.22×1013 cmHz0.5W-1.
On the part of AlGaN/GaN MOS-HFETs by using photo-CVD SiO2 as gate oxide, the gate leakage current can be reduced by more than four orders of magnitude. Ids, max, gm, max, and gate voltage swing (GVS) were 633 mA/mm, 90 mS/mm, and 7.5V, respectively, at room temperature. Even at 300oC, the electrical characteristics of MOS-HFETs still remain relatively reasonably. Such a result indicated that the AlGaN/GaN MOS-HFETs with photo-CVD SiO2 films was highly potential for application in hash environment. Furthermore, the temperature-induced degradation of saturation velocity was predominantly responsible for the degradation mechanisms of Ids,max and gm,max.
Low frequency noise of AlGaN/GaN MOS-HFETs with photo-chemical vapor deposition (photo-CVD) SiO2 gate oxide was fitted well by the 1/f law up to 1 kHz in the linear region. The Hooge’s coefficient α was estimated to be around 10-3. The normalized noise power density of the MOS-HFETs was proportional to Vgs-1 when -4V < Vgs < 0V, and was independent of the gatevoltage when 0V < Vgs < 4V, and the devices noise were contributed from the gated and un-gated region, respectively. On the other hand, the noise behavior in the saturation region was degenerated 1/f-type noise. The 1/fΓ noise characteristics and Γ value were affected by the interface state distribution in the energy band-gap as the gate bias varied in the saturation region. Furthermore, the electrical and noise characteristics were improved by using AlGaN/GaN/AlGaN double heterostructure, which showed Ids, max, GVS, and α were 755 mA/mm, 8V, and 2.95×10-4, respectively.
We also reported low temperature photo-CVD SiNxOy layers and room temperature photo-CVD SiO2 onto GaN/sapphire templates. The refractive index for photo-CVD SiNxOy was 1.65~1.7. The 0.845 nm RMS roughness observed from the photo-CVD SiNxOy layer was much smoother than that observed from photo-CVD SiO2 layer grown at 300oC. The breakdown field of the capacitors with photo-CVD SiNxOy could reach 13 MV/cm. The interface state density at the SiNxOy/GaN interface was also found to be reasonably low, which was 1.04×1011 cm-2eV-1. Furthermore, the quality of Al/room temperature photo-CVD SiO2/GaN capacitors was also reasonably good for application. These properties suggested that the low temperature photo-CVD SiNxOy and room temperature photo-CVD SiO2 were potentially
useful in nitride-based MIS-FETs and MIS-HFETs.
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