有鑑於III-V族材料系統極佳之高速表現及高電子移動率特性，使得砷化鎵與磷化銦系列異質接面雙極性電晶體在積體電路應用上極具發展潛力，然而，對砷化鎵系列異質接面雙極性電晶體而言，將會有大量的電子與電洞復合於射極側壁與基極金屬電極層間之裸露基極表面，造成一顯著之表面復合電流與射極尺寸效應。因此，為了提升元件在數位及微波電路上之應用，消除射極尺寸效應已成為各學術單位重要研究課題。在本論文中，我們利用低壓有機金屬化學汽相沉積法成長及研製磷化銦鎵/砷化鎵材料系列之異質接面雙極性電晶體。討論不同溫度環境下，射極突出部厚度對磷化銦鎵/砷化鎵異質接面雙極性電晶體特性之影響。由於表面通道仍存在於射極突出部與基極金屬電極層間之裸露基極層區域之表面，而且，不適當的突出部厚度將造成嚴重的表面復合現象於突出部側壁與基極金屬電極層介面間。所以適當之突出部厚度對於抑制表面復合現象是一個值得探討的問題。從實驗結果發現，磷化銦鎵/砷化鎵異質接面雙極性電晶體之最佳射極突出部厚度介於100-200 Å之間。當突出部厚度介於100-200 Å之間，元件具有最好的電晶體特性、最小的基極電流、最大的電流增益、最好的熱穩定性與可靠度。

It is well known that the high electron mobilities and velocities in III-V compound semiconductor materials make GaAs- or InP-based heterojunction bipolar transistors (HBTs) be attractive for high-speed IC applications. However, for a typical GaAs-based HBT, a lateral diffusion of injected carriers at the exposed base surface between the emitter mesa sidewall and the base Ohmic contact leads to the considerable recombinations between electrons and holes. In addition, a capture of electrons and holes by surface traps results in the undesired dependences of current gain on the emitter size. For the practical high speed digital and microwave applications, the elimination of the emitter size effect is a crucial issue. In this thesis, the temperature-dependent characteristics of InGaP/GaAs HBTs with different emitter-ledge thickness are systematically investigated. The undesired surface channel phenomenon at the exposed base surface between the base contact and emitter ledge is comprehensively analyzed. Moreover, improper thickness of emitter-ledge passivations would cause serious surface recombination at the edge of emitter ledge. Therefore, the thickness of emitter ledge is a critical issue and should be carefully considered. From experimental results, the devices with emitter ledge thickness between 100 and 200 Å reveal the best device characteristics, the lowest base current, the highest DC current gain, and the best thermal stability and reliability. Therefore, the optimum emitter ledge thickness of InGaP/GaAs HBTs is between 100 and 200 Å.

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