由於傳統有機發光二極體大部分皆是利用氧化銦錫(ITO)薄膜當作電極，雖然氧化銦錫薄膜具有高穿透與高導電性質，但是卻具有粗糙之表面，粗糙的薄膜表面形貌會受到局部電場較強的影響而產生尖端放電效應，對後續傳輸層或發光層的塗佈產生影響，因此本論文利用射頻式磁控濺鍍系統(RF-magnetron sputter)來製作氧化銦鋅(IZO)堆疊氧化銦錫結構取代傳統有機發光二極體(OLED)之電極，因氧化銦鋅薄膜具有平坦之薄膜表面，其堆疊於氧化銦錫薄膜之上是可以改善氧化銦錫表面粗造缺點，並有利於後續製作傳輸層或發光層，使得元件效率有效提升。接著利用高分子材料聚(9-乙烯咔唑) (PVK)與雙（4,6-二氟苯基吡啶-N，C2）吡啶甲酰合銥(Firpic)材料來製作有機發光二極體之發光層，探討氧化銦鋅堆疊氧化銦錫結構對元件特性的影響，並利用雷射干涉微影技術製作粗糙化之表面於玻璃基板背部，因具有粗糙化結構之玻璃基板比起傳統無任何結構設計之玻璃基板，可以改善玻璃基板與空氣因折射率差導致的光反射，因此可有效降低玻璃基板與空氣間的反射率，使得有機發光二極體之發光亮度與發光效率有效地被提升。利用二氧化矽粗糙化結構於基板背部作為有機發光二極體元件之抗反射層，當二氧化矽粗糙化結構週期為0.75 μm時，比起傳統無任何結構設計玻璃基板，在波長470~500 nm之間，其結構之平均反射率由8.25%下降至約為3.02%。此外將二氧化矽粗糙化結構製作於磷光有機發光二極體元件，在週期為0.75 μm時，其最高發光亮度提升至336 cd/m2，而最大發光效率提升至7.58 cd/A。

Most of the conventional organic light-emitting diodes used indium tin oxide (ITO) film as an electrode, because the ITO film had high transmission and conductivity. However, ITO film had a roughness surface. The roughness surface morphology of the ITO film was likely to cause problems in the fabrication of the subsequent transport layer or light emitting layer. Therefore, we used RF-Sputter to fabricate indium zinc oxide (IZO) stacked ITO structures instead of traditional electrodes for organic light-emitting diodes (OLEDs) Because IZO film had a smooth surface, stacking IZO on the ITO film could improve the roughness defects of ITO. Then, using poly (9-vinylcarbazole)(PVK) and Bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III(Firpic) to fabricate the light-emitting layers of OLED, and discussing the device characteristics of the relationship between IZO stacked ITO film. Additionally, we used laser interference lithography to fabricate silicon dioxide (SiO2) on the back of the substrate. The difference in refractive index between the glass and air would create light reflection, however the roughness structure could effectively reduce the reflection. Among the different period of the SiO2 roughness structure, the period of 0.75 μm had the minimum average reflection 3.02% at 470~500 nm. The maximum luminous of the OLED with SiO2 roughness structure period for 0.75 um was increased to 336 cd/m2, while the maximum luminous efficiency was increased to 7.76 cd/A.

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