本實驗利用雙靶源射頻磁控濺鍍系統在軟性塑膠基板上沉積摻鋁氧化鋅(ZnO:Al，AZO)薄膜，並且探討AZO透明導電膜的微觀結構、組成成分，電性及光學特性；本實驗分為三大部分，第一部分：使用PC基板在室溫下製作AZO薄膜，透過改變鋁靶的射頻功率(PAl=0~35 W)來控制薄膜中鋁的摻雜含量，並且研究AZO薄膜的物理性質變化；第二部分：PC基板加溫200 ℃下製作薄膜，同樣探討改變鋁靶功率後薄膜之物理性質的改變；第三部分：選取PI及PET兩種軟性基板來探討基板對於薄膜物理性質的影響。
最後，將樣品薄膜作為高分子發光二極體(PLED)之陽極，元件的組成結構分別為：PEDOT:PSS做為電洞傳輸層，PF做為發光層，Ca/Al做為陰極，並研究元件的光電特性。
研究結果顯示，室溫下所製備的AZO薄膜，在鋁靶功率為25 W時，可得一導電性良好(ρ=7.75×10-4 Ω-cm)與穿透率為89 %之透明導電膜，應用在PLED元件上可得此系列最佳整流比410.3；另外，基板加溫200 ℃所製備的AZO薄膜，同樣在鋁靶功率為25 W時，可得導電性良好(ρ=7.63×10-4 Ω-cm)與穿透率為91 %之透明導電膜，而在PLED元件應用上，當順偏壓為10.7 V時獲得最高亮度為4143 cd/m2；最後，AZO薄膜的物理性質並不會受到軟性基板的不同而發生變化。

The Aluminum-doped zinc oxide (ZnO:Al, AZO) thin films were deposited on soft polymer substrates with a RF magnetron co-sputtering method. In this research, we divide them into three parts to study. The First part: AZO thin films were deposited on PC substrates at room temperature, and the Al content was controlled by varying Al RF power (PAl=0~35 W), we investigated the influence of Al contents on the structure, composition, electrical and optical properties of AZO films. The second part: same as the previous part we investigated the physical properties of AZO thin films deposited in different Al content, however, with PC substrates measured in 200 ℃. The third part: we chose PI and PET as the soft substrates, and investigated substrates influence on physical properties of AZO thin films.
The AZO films then were used for the anode contact of PLED devices. The PLED devices structure consisted of a hole transport layer (HTL) was PEDOT:PSS, an emitting layer (EML) was PF. The cathode contact deposited on top of the EML was a bi-layer consisting of Ca and Al layer. The electro-luminescence performances of the devices were studied.
The AZO thin film, which was prepared at room temperature at PAl= 25 W, present the lowest resistivity (ρ=7.75×10-4 Ω-cm) and high transmittance (89 %). The performance of PLED had the best rectification ratio was 410.3 in this series. We also obtained the AZO thin film which has low resistivity (ρ=7.63×10-4 Ω-cm) and high transmittance (91 %) by heating the substrate temperature to 200 ℃ at PAl= 25 W. The performance of PLED has the largest brightness of 4143 cd/m2 at 10.7 V. Finally, the physical properties of the AZO thin films won’t be changed by the difference of the soft substrates.

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