基板表面的粗糙度是影響多晶矽薄膜太陽能電池效率的一個重要因素，故探討基板表面粗糙度對多晶矽薄膜結核的影響，以及研究建立基板表面粗糙度的製程是必要的。過去的製程所建立基材表面的粗糙度，其尺度多為微米等級。本研究的實驗利用過度蝕刻製程將基板表面的粗糙度尺度下縮至奈米等級，並在不同表面粗糙度的二氧化矽基板上生長多晶矽薄膜，藉以研究多晶矽薄膜的生長狀況。實驗的結果顯示，利用過度蝕刻的製程的確是可以有效的提高基板表面的粗糙度，但是我們須更仔細控制實驗中的變因，以求得蝕刻時間與基板表面粗糙度的關係。而多晶矽生長在不同表面粗糙度的基板上時，其晶粒大小相當接近，結晶面向並不改變。

The surface roughness of substrate is an important factor influencing the efficiency of poly-silicon thin-film solar cells. It is thus necessary to investigate the effect of surface roughness of substrate on nucleation of poly-silicon thin film and to establish a fabrication process of producing surface roughness of substrate. In the past, the surface roughness of substrate established was mostly in micron scale. In this experiment we utilized over-etching fabrication to establish surface roughness of substrate in nanometer scale. We investigated the different growth patterns of poly-silicon thin film when it is deposited on the silicon-dioxide substrates with different surface roughness. Experiment results indicate that it is effective to increase surface roughness of substrate by over-etching fabrication, but we have to control variables in experiment more carefully in order to get a relation between etching time and surface roughness. In addition, it was observed that grains of poly-silicon were of similar size and orientations remained the same while deposited on substrates with different roughness.

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