多年來，人們對於鈣鈦礦太陽能電池的興趣持續顯著的增長，隨著對不同材料在使用上的研究不斷深入，鈣鈦礦太陽能電池已顯示出其卓越的吸光性。在目前的調查中，穩定性恰好是很多科學家和研究人員所關注的領域。與硅基太陽能電池不同的地方在於鈣鈦礦太陽能電池 (PSC) 在暴露於環境中時更容易被分解。近期的研究顯示，有種特定的電子傳輸材料—氧化錫 (IV)，它與 TiO2 和 ZnO 相比，在暴露於環境時會給予更穩定的性能。選擇穩定的鈣鈦礦太陽能電池，對於優化它讓人感到有趣。有許多材料的參數會影響太陽能電池的電氣參數，例如填充因子、電流密度、開路電壓，最重要的是功率轉換效率。材料參數包括缺陷密度、厚度、層結構、電荷複合等。在這項研究中，評估了缺陷密度和厚度。使用稱為 SCAPS-1D 的模擬軟件對具有電子傳輸層 SnO2、吸收層的 MAPbI3、空穴傳輸層的 Spiro-OMeTAD 結構的 PSC 進行建模。發現1015 cm-3 的缺陷密度可以模擬先前文獻所提供的實驗數據並利用 SAS 提供的 JMP 軟件使用實驗設計 (DOE)的方式完成疊層厚度的優化。隨後使用一次一個因子 (OFAT)的方式以及參考先前的文獻進行更進一步的分析，以研究得出最接近其最佳厚度的疊層。ETL、HTL 和吸收層的所得厚度分別為 8 nm、100 nm 和 627 nm。這些厚度的模擬電氣參數為 0。9519 V 用於開路電壓 (Voc)，24。閉路電流密度 (Jsc) 為 17 mA/cm2，71。填充因子 (FF) 為 88%，16。54% 的電源轉換效率 (PCE)。

The interest in Perovskite solar cells has been growing significantly over the years. It has shown great light absorbing properties as the investigation of different material usage grew. In current investigations, the stability happens to be an area of which a lot of scientists and researchers are particular about. Unlike the silicon based solar cells, Perovskite solar cells (PSCs) tend to degrade easily when exposed to the environment. Recent studies have shown that a particular electron transport material, namely tin (IV) oxide (stannic oxide), produced very stable performance when exposed to the environment as opposed to TiO2 and ZnO. By choosing a stable perovskite solar cell, optimization is now of interest. There are many material parameters that affect the electrical parameters of a solar cell such as the fill factor, current density, open circuit voltage and most importantly the power conversion efficiency. The material parameters include defect density, thickness, structure of the layers, charge recombination, etc. In this study, the defect density and thickness were assessed. A simulation software called SCAPS-1D was used to model a PSC with the structure SnO2 for electron transport layer/MAPbI3 for absorber layer/Spiro-OMeTAD for hole transport layer. A defect density of 1015 cm-3 was found to model the experimental data provided by a previous literature. The optimization of the layers’ thicknesses was done using a Design of Experiment (DOE) method using JMP software provided by SAS. This was followed by further analysis using a one-factor-at-a-time (OFAT) method along with previous literatures to investigate each layer near its optimum thickness. The resulting thicknesses were 8 nm, 100 nm, and 627 nm for the ETL, HTL and absorber layer, respectively. The simulated electrical parameters for these thicknesses were 0.9519 V for the open circuit voltage (Voc), 24.17 mA/cm2 for the closed-circuit current density (Jsc), 71.88% for the Fill Factor (FF), and 16.54% for the power conversion efficiency (PCE).

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