晶圓是由不同的製程搭配不同的清洗槽內的清洗過程所形成的半導體元件的基礎，更是半導體產品重要的開始。清洗的目的最主要是為了防止或去除原生氧化層、移除晶圓表面汙染物及保持晶圓表面，清洗過程決定了晶圓表面之潔淨度的好壞，潔淨度是影響晶圓製程良率 (Yield) 、元件品質 (Quality) 及可靠度 (Reliability) 的重要因素，並降低產量的損失。微粒汙染物會隨著清洗液流動而停滯於擋塊及清洗槽壁面，最嚴重的是停滯於晶圓表面導致晶圓缺陷。本研究利用數值模擬方法與 PIV 實驗方法建立流場可視化之內流場循環系統，再通過設計擋塊有不同的轉動角度來改變流場，提升微粒汙染物移除率及降低微粒汙染物沉積，藉此達到提升清洗效率，發現當中間擋塊的轉動角度越大，大渦流區的面積增大隨之清洗面積也增大，並且解決兩側擋塊微粒汙染物的沉積。

Semiconductor wafers, which is the base of any semiconductor devices subjects to numerous bathing in a wafer rinsing tank post each processing operation, in order to remove surface contamination that arises during the manufacturing protocols. However in this method, some of the processing fluid accumulates near the lifters on which the wafers are usually mounted. In this thesis, it was aimed to enhance the wafer rinsing efficiency through the flow field manipulation by implementing a new design of lifters’ through the orientation change of lifting angle. Flow field inside the tank was studied through 3-D numerical modeling and PIV methods mean while changing the orientation of the lifters inside the rinsing tank. From the obtained results, it can be concluded that a better flow field can be derived which will be able to flush out most of the particulates when the orientation of the middle lifter is changed either in a clock or counter clock wise direction at an angle of 600.

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