本論文係利用摻雜的有機材料五環素(Pentacene)薄膜首次研製垂直式雙極性電晶體應用在光感測上。利用SEM、AFM及XRD來檢視摻雜與無摻雜有機薄膜的表面結晶形態與程度;EDS和α-step分析表面成分與厚度;FTIR與PL來偵測鍵結位置及能隙大小,並藉由量測二極體特性來判定薄膜正負性及利用薄膜成長參數研究對光暗電流及增益值的影響。實驗結果顯示,加入鈉、碘的摻雜確實能使有機材料產生錯合物形成.使薄膜類似無機半導體具有正、負型整流之特性曲線。研製的垂直式有機異質接面雙極性電晶體 (PNP、NPN) 結構為Metal/EIL(HIL)/Doped-PEN/EIL(HIL)/Doped-PEN/c-Si/Metal。在NPN電晶體,以醯銨鈉掺雜作為N層的時，常溫及Vbe=30V偏壓下,在不照光時在電流增益為β=3.7，但照光後之增益變成β=34；而以醋酸鈉掺雜作為N層時，在不照光之電流增益達β=4.46，照光後電流增益改變為β=75。吾人認為電流益的不同應與摻雜材料有關，而光電流增益則與增加的電子電洞對有關並提出一模式來解釋

In this thesis, for the first time, we developed a novel vertical type organic bipolar junction transistor for high gain photo-detecting applications by modulating the Pentacene organic thin films’ conductivity and carrier type with NaNH2 and CH3COONa for N type dopant. We used SEM, AFM, and XDR to inspect morphology and crystallization of the organic films; EDS and α-step to analyze the surface component and film thickness. In addition, FTIR and PL were employed for bonding location and band gap, respectively. The Schottky and ohmic characteristics of the organic/Si heterojunctions (pn and np) were examined by I-V measuring. Besides, the vertical type organic structure Metal/EIL(HIL)/doped- Pentacene/EIL(HIL)/ doped-Pentacene/Si-substrate/Metal hetero-junction bipolar phototransistors(PNP and NPN) were prepared and their DC I-V curves with and without light irradiation were also measured. Without light irradiation, the current gains of the NPN bipolar transistors were 3.7, and 4.46 with NaNH2, and CH3COONa as dopant, respectively, while under light illumination, the β were raised to 34, and 75, respectively. We suspect the dark current gain is related to dopant, while the photo current gain is dominated by the extra electron hole pairs after light illumination in both Si substrate and organic thin films. We developed a model to interpret these phenomena.

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