簡易檢索 / 詳目顯示

研究生: 蔡正裕
Tsai, Chun-Yu
論文名稱: 多晶矽薄膜貼底排除方法之比較
Stiction Relief of Polysilicon Thin Film
指導教授: 高騏
Gau, Chi
學位類別: 碩士
Master
系所名稱: 工學院 - 航空太空工程學系
Department of Aeronautics & Astronautics
論文出版年: 2003
畢業學年度: 91
語文別: 中文
論文頁數: 73
中文關鍵詞: 壓力感測器面型加工微機電系統黏著效應二氧化碳超臨界法薄膜形變
外文關鍵詞: stiction, thin film, MEMS
相關次數: 點閱:67下載:1
分享至:
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報
  • MEMS的面型微細加工,使得半導體製程製作之二維積層薄膜結構,得以產生三維度的懸浮微結構,利用元件結構層與犧牲層材料之間的選擇性蝕刻,將犧牲層去除而留下結構層,此過程則稱之為結構釋放。對於最廣為採用的濕式結構釋放過程,其後通常必須再經歷清洗與乾燥兩個步驟,微結構才可真正懸浮於基底之上,但是過程中卻非常容易發生結構與基底之間的黏著貼底(stiction)現象。此現象通常發生於矽晶材料所形成之立體懸浮或中空結構內,形成原因主要是受到薄膜殘留應力與界面材質的影響。目前此現象的發生已成為壓力感測器面型微細加工技術發展的最大障礙。
    本實驗是要探討採用面型微加工技術來製作多晶矽感壓薄膜,其在結構釋放後所遭遇的薄膜形變問題、並提出解決方法。晶片的製作係利用國家奈米元件實驗室(NDL)及國科會南區微機電系統中心的設備進行,利用面型微細加工和犧牲層溼蝕刻技術在晶格方向(100)的p型矽晶圓上一體成型製作出多晶矽感壓薄膜,並利用高溫爐管實施1100℃的退火,以大幅降低薄膜的殘留應力,之後分別利用通入異丙醇與二氧化碳超臨界法來降低水的表面張力的影響。由實驗結果得知,吾人已成功地達到避免薄膜黏著貼底的現象,並獲得十分良好的研究成果。

    Surface micromachining is a process to fabricate free standing and freely moving microstructures in a large two dimensional design space. The tick is to deposit and pattern two thin films of materials that can be etched away selectively with respect to each other. After the etch process, the sacrificial layer is removed by etching solvent. When wet etching step is finished and wafer have to be cleaned by DI water, during the drying and evaporation process, the microstructure can be easily ravaged by water capillary force and result in the deformation of structural layer . Stiction phenomenal usually occurs in the hollow construction formed by polysilicon, and its major happening reason is thin film residual stress and different interface material .This phenomenal is becoming the major obstruction in the development of micro-pressure sensors of surface micromachining.
    This thesis is discussing thin film diaphragm deformation problems during the fabricating process that when using surface micromachining method to fabricate micro-pressure sensors and proffers some solving methods. The sensing chips are made by fabrication equipment in NDL and STNRC. In order to solve thin film stick problems, we not only apply methods of decreasing water capillary force by irrigating isopropyl alcohol、supercritical drying of CO2 , but also reduce residual stress under the annealing process in the high temperature furnace at 1100℃ .We have already accomplish our expectation successfully and won excellent research result .

    中文摘要 英文摘要 目錄 I 表目錄 III 圖目錄 V 符號說明 VI 一、緒論 1-1簡介 1 1-2研究動機 2 1-3文獻回顧 3 二、感壓複晶矽薄膜的設計與製程原理 2-1感壓薄膜的設計 8 2-2感測器感壓薄膜的原理 9 2-3面型微矽加工犧牲層技術 10 2-4結構沾黏貼底(stiction)現象 14 三、實驗設備與裝置 3-1晶片製程相關設備 16 四、薄膜製作與stiction排除 4-1多晶矽薄膜製作 20 4-2避免或減少stiction現象 23 五、實驗結果與討論 5-1濕蝕刻孔的乾蝕刻問題 26 5-2犧牲層的蝕刻27 5-3高溫退火對多晶矽薄膜的影響 28 5-4不同厚度薄膜的變形 29 5-5不同面積大小薄膜的變形 31 5-6降低表面張力的方法及比較 31 六、結論 34 參考文獻 36 表目錄 表4-1標準清洗程序(Standard Clean) 44 表4-2TE 5000S機台參數設定(Etching TEOS)44 表4-3ECR-6001機台參數設定(Etching Polysilicon) 45 表4-4二氧化碳超臨界法HEAT製程參數設定 46 表4-5二氧化碳超臨界法BLEED製程參數設定 46 圖目錄 圖2-1(a)撓度(b)應變在均勻負載情況下在薄板上的分佈圖 47 圖2-2微結構沾黏於基底上的情形 48 圖2-3因水的表面張力造成微結構變形的機制 48 圖4-1多晶矽薄膜製程(共2頁) 49 圖4-2各層光罩圖51 圖4-3降低stiction表面張力影響之操作流程圖 52 圖4-4二氧化碳超臨界法的P-T圖 53 圖4-5二氧化碳超臨界法乾燥設備系統圖 54 圖5-1以O2+Cl2乾蝕刻時,去除不完全的鈍化膜殘留在表面,造成黑矽的現象 55 圖5-2經正方形薄膜厚1.0μm,邊長200μm,經CO2超臨界法所得薄膜向上呈凹凸隆起變形的 數位照片 56 圖5-3正方形薄膜邊長200μm,厚1.0μm,經CO2超臨界法所得薄膜表面輪廓描繪圖 57 圖5-4正方形薄膜邊長350μm,厚1.0μm,經CO2超臨界法所得薄膜表面輪廓描繪圖 58 圖5-5正方形薄膜邊長400μm,厚1.0μm,經CO2超臨界法所得薄膜表面輪廓描繪圖 59 圖5-6正方形薄膜厚1.0μm,(a)邊長200μm;(b) 邊長300μm ,於rinse後立即拿出照像, 薄膜中央部位形變貼底 60 圖5-7正方形薄膜厚1.8μm,經異丙醇高溫烤乾法,不同邊長的薄膜表面輪廓描繪比較圖 61 圖5-8正方形薄膜厚2.4μm,經異丙醇高溫烤乾法,不同邊長的薄膜表面輪廓描繪比較圖 62 圖5-9正方形薄膜厚3.2μm,經異丙醇高溫烤乾法,不同邊長的薄膜表面輪廓描繪比較圖 63 圖5-10正方形薄膜厚1.8μm,經CO2超臨界法,不同邊長的薄膜表面輪廓描繪比較圖 64 圖5-11正方形薄膜厚2.4μm,經CO2超臨界法,不同邊長的薄膜表面輪廓描繪比較圖 65 圖5-12正方形薄膜厚3.2μm,經CO2超臨界法,不同邊長的薄膜表面輪廓描繪比較圖 66 圖5-13正方形薄膜厚1.8μm,於rinse後直接烤乾,不同邊長的薄膜表面輪廓描繪比較圖 67 圖5-14正方形薄膜厚2.4μm,於rinse後直接烤乾,不同邊長的薄膜表面輪廓描繪比較圖 68 圖5-15正方形薄膜厚3.2μm,於rinse後直接烤乾,不同邊長的薄膜表面輪廓描繪比較圖 69 圖5-16SEM下所見薄膜剖面的情形(a)薄膜逐漸貼底之SEM圖(b)薄膜懸浮之SEM圖 70 圖5-17正方形薄膜於rinse後直接烤乾,在不同的厚度下,薄膜邊長與變形量的關係圖 71 圖5-18正方形薄膜經IPA後烤乾,在不同的厚度下,薄膜邊長與變形量的關係圖 72 圖5-19正方形薄膜經CO2超臨界法後,在不同的厚度下,薄膜邊長與變形量的關係圖 73

    1. Alley, R. L., Cuan, G. J., Howe, R.T. and Komvopoulos, K., "The effectect of release-etch processing on surface microstructure stiction," Proc. IEEE Solid-state Sensor and Actuator workshop, Hilton Head Island, SC, 21-25 June 1992. pp.202-207.

    2. Core, T. A., Tsang, W.K. and Sherman, S. J., "Fabrication Technology for an Integrated Surface-Micromachined Sensor," Solid State Technology, October, pp.39-47, 1993

    3. Elliott, D. J., "Integrated Circuit Fabrication Technology," 2nd ED., McGraw Hill, 1989.

    4. E. Kalvesten, “The First Surface Micromachined Pressure Sensor for Cardiovascular Pressure Measurements,” IEEE, MEMS-98, pp. 574-579, 1998

    5. Gould, G. and Irene, E. A., "An in situ Study of Aqueous HF Treatment of Silicon by Contact Angle Measurement and Ellipsometry," Journal of Electrochemical Society : Solid-State Science and Technology, Vol. 135, No. 6, pp.1535-1539, 1988

    6. Guckel, H. and Burns, D. W., "Planar Processed Polysilicon Sealed Cavities for Pressure Transducer Arrays," IEDM 84, pp.223-225, 1984

    7. Guckel, H., Burns, D. W., Nesler, C. K., and Rutigliano, C. R., "Fine Grained Polysilicon And its Apllication to Planar Pressure Transducers," 4th International Conference on Solid-state Sensor and Actuators(Transducers ’87), Tokyo, Japan, 1993, p.277-282

    8. Guckel, H., Christenson, T. R., Skrobis, K. J., Sniegowski, J. J., Kang, J. w., Choi, B., Lovell, E. G. "Microstruture Sensors," Electron Devices Meeting, 1990. Technical Digest., International , 1990 , pp. 613 -616

    9. Guckel, H., Sniegowski, J. J. and Christenson, T. R., "Advance in processing teching for silicon micromechanical stiction devices with smooth surfaces," Proc. IEEE Micro Electro Mechanical System, Salt Lake City, UT ,20-22 February, 1989, pp.117-122

    10. Guckel, H., Sniegowski, J. J. and Christenson, T. R., "Fabrication of Micromechanical Devices from Polysilicon Films with Smooth Surfaces," Sensors and Actuators, 20, pp.117-122, 1989

    11. Houston, M. R., R. Maboudian, and R. Howe " Ammonium Fluoride Anti- Stiction Treatment for Polysilicon Microstructures ,"8th International Conference on Solid-state Sensor and Actuators(Transducers ’95), Stockholm, Sweden, 1995, p.210-213

    12. Israelachvili, J. N., "Intermolecular and Surface Forces," Academic Press, London, 1992

    13. Jerman, J. H., "The Fabrication and Use of Micromachined Corrugated Silicon Diaphragms," Sensor and Actuators, vol. 32, no. 3, Apr. 1990,pp.998-992

    14. Judge, J. S., "A Study of the Dissolution of SiO2 in Acidic Flouride Solutions," Journal of the Electrochemical Society : Solid State Science, Vol. 118, No. 11, pp.1772-1775, 1971

    15. Jie Yang, Harold Kahn, An-Qiang He, Stephen M. Phillips, Senior Member, IEEE, and Arthur H. Heuer, "A New Technique for Producing Large-Area As-Deposited Zero- Stress LPCVD Polysilicon Films:The MultiPoly Process, " IEEE Journal of microelectromechanical systems,Vol. 9, No. 4, December 2000

    16. Kim, C. J., Kim, J. Y., Sridharan, B., "Comparative Evaluation of Drying Techniques for Surface Micromachining," Sensor and Actuator A: physical/ Volume: 64, Issue: 1, 1998, pp.17-26

    17. Komvopoulos, K. " Surface engineering and microtribology for microelectromechanical systems," Wear Volume: 200, Issue: 1-2 , December, 1996, pp.305-327

    18. Lee, Y. I., Park, K. H., Lee, J., Lee, C. S., Yoo, H.J., Kim, C. j., and Yoon, H. J. " Dry Release for Surface Micromachining with HF Vapor-Phase Etching," Journal of Microelectromechanical Systems, VOL. 6, NO. 3, SEPTEMBER 1997, pp.226-233

    19. Legtenberg, R., Elders, J., and Elwenspoek, M., "Stiction of Surface Microstructure after Rinsing and Drying: Model and Investigation of Adhesion mechanisms," Processing of Transducers '93, the 7th International Conference on Solid-state Sensor and Actuators , Yokohama, Japan, June 7-10, 1993, Institute of Electrical Engineers, Japan, pp.198-201

    20. Lin, L., Yun, W., Chu, H. C. and Chiao, M., "Surface Micromachined Diaphragm Pressure Sensors with Optimized Piezoresistive Sensing Resistors," International Conference on Microelectronics and VLSI, TENCON '95, IEEE, pp.24-27, 1995

    21. Miller, S. L., Rodgers, M. S., LaVigne, G., Sniegowski, J. J., Clews, P., Tanner, D.M., and Peterson, K.A., "Failure Modes in Surface Micromachined MicroElectroMechanical Actuators," IEEE Trans., pp.17-25, 1998

    22. Mishima, H., Yasui, T., Mizuniwa, T., Abe, M., and Ohmi, T., IEEE Trans. Semicond. Manuf.,2, (1989), pp.69-75

    23. Monk, D. J., Soane, D. S. and Howe, R. T., "A Review of the Chemical Reaction Mechanism and Kinetics for Hydroflouric Acid Etching of Silicon Dioxide for Surface Micromachining Applications," Thin Solid Films, 232, pp.1-12, 1993

    24. Mulhern, G. T., Soane, D. S. and Howe, R. T., "Supercritical Carbon Dioxide Drying of Microstructures ," Processing of Transducers '93, the 7th International Conference on Solid-state Sensor and Actuators , Yokohama, Japan, June 7-10, 1993, Institute of Electrical Engineers, Japan, pp296-299

    25. Mastrangelo, C. H., Saloka, G. S., "A dry-release method based on polymer columns for microstructure fabrication" MEMS '93, Proceedings 'An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems'. IEEE, pp.77-81, 1993.

    26. Pfann, W. G. and Thurston, R. N., "Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance Effects," Journal of Applied Physics, Vol. 32, No. 10, pp.2008-2019, 1961
    27. Pong K., Ho C., Liu J. Tai Y., “Non-linear pressure distribution in uniform microchannels, “ in Appl. Microfabrication to Fluid Mechanics, ASME Winter Annu. Meet., pp.51-56, Chicago, IL Nov. 1994.

    28. Sharpe, W. N., Yuan, B. Jr. and Vaidyanathan, R., "Measurements of Young’s Modulus, Poisson’s Ratio, and Tensile Strength of Polysilicon," Tenth Annual International Workshop on Micro Electro Mechanical Systems, MEMS '97, Proceedings, IEEE, pp.424-429, 1997

    29. Smith, C. S., "Piezoresistance Effect in Germanium and Silicon," Physical Review, Vol. 94, No. 1, pp.42-49, 1954

    30. Sugiyama, S., Shimaoka, K. and Tabata, O., "Surface Micromachined Micro-Diaphragm Pressure Sensors," International Conference on Solid-State Sensors and Actuators, Transducers '91 Digest of Technical Papers, pp.188-191, 1991

    31. Sze, S. M., "Semiconductor Sensors," John Wiley & Sons, Inc., New York, 1994

    32. Takeshima, N., Gabriel, K. J., Ozaki, M., Takahashi, J., Horiguchi, H., and Fujita, H., "Electrostatic Parallelogram Actuators," Proceedings of Transducers '91, the 1991 International Conference on Solid-State Sensors and Actuators, IEEE Press, San Francisco, CA, June 24-27, 1991, pp.188-191,

    33. Tabata, O., Kawahata, K, Sugiyama, S. and Igarashi, I., "Mechanical Property Measurements of Thin Films Using Load-Deflection of Composite Rectangular Membrane," An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots, Proceedings, pp.152-156, 1989

    34. Tufte, O. N., Chapman, P. W. and Long, D., "Silicon Diffused-Element Piezoresistive Diaphragms," Journal of Applied Physics, Vol. 33, No. 11, pp.3322-3327, 1962

    35. Van Mullem, C. J., Gabriel, K. J., and Fujita, H. "Large Deflection Performance of Surface Micromachined Corrugated Diaphragms," Proceedings of Transducers '91, the 1991International Conference on Solid-State Sensors and Actuators, San Francisco, CA, June 24-27, 1991, pp.188-191,

    36. Wu, T. H. T. and Rosler R. S., "Stress in PSG and Nitride Films as Related to Film Properties and Annealing," Solid State Technol., May, pp. 65-71, 1992

    37. Xin Zhang, Tong-Yi Zhang, Man Wong, Yitshak Zohar, "Residual-Stress relaxation in polysilicon thin films by high-temperature rapid thermal annealing," Sens. Actuators, vol. A64, pp. 109-115, 1998

    38. Yee, Y., Chun, K., Lee, J. D., and Kim, C.-J., "Polysilicon surface modification technique to reduce sticking of microstructures," Sens. Actuators, vol. A52, nos. 1-3, pp. 145-150, Apr. 1996

    39. 葉武振, "微壓力感測器的研究與發展," M. S. thesis, National Cheng Kung University, Taiwan, Republic of China (2000).

    40. 廖木桂, "微壓力感測器之薄膜形變," M. S. thesis, National Cheng Kung University, Taiwan, Republic of China (2001).

    下載圖示 校內:2004-09-04公開
    校外:2005-09-04公開
    QR CODE