本實驗利用離子束濺鍍系統（Ion Beam Sputtering, IBS)通氬氣與氧氣轟擊銅靶成長銅/氧化亞銅複合薄膜，薄膜的銅與其氧化物的成分比例隨著通氧比例而改變。在30％通氧量下IBS成長出銅/氧化亞銅複合薄膜進行後退火實驗，經過450℃退火的薄膜在黃光附近的穿透率從45％提升至60％，600℃退火則在可見光區的穿透率整體提升至70％以上，電性皆維持一定水準。在60％通氧量下所成長的薄膜會以氧化亞銅為主體，作為鈣鈦礦光偵測器的電洞傳輸材料（Hole Transport Material, HTM），期望減少鈣鈦礦（Perovskite）因大氣與金電極對其不良的影響。比較標準元件與鍍上氧化亞銅之鈣鈦礦光偵測器之實驗結果，會發現有鍍上氧化亞銅的光偵測器會提高光響應（Responsivity, R）與偵測靈敏度（Detectivity, D*），並將樣品放置15天後測試其穩定性。未有氧化亞銅保護的鈣鈦礦光偵測器效能急遽劣化，而鍍上氧化亞銅的光偵測器皆維持一定效能，由此可證明氧化亞銅對於鈣鈦礦光偵測器可作為有效的電洞傳輸層更可以減少鈣鈦礦受大氣中水氧的影響使元件效能的穩定性延長並維持一定水準。

In this thesis, I used Ion beam sputtering (IBS) and Cu target to grow Cu/Cu2O composite thin film. In the growing process, the ratio of Cu and oxides varied with the ratio of Argon and Oxygen. At 30% Oxygen partial pressure, the thin film grew by IBS would mainly comprise of Cu and Cu2O. The first part of this thesis is focused on this thin films and rapid thermal annealing (RTA), and it is expected that the transmittance and electrical properties of Cu/Cu2O composite thin film would be improved.
Nowadays, the most popular materials used in solar cells and photodetectors area is the perovskite. Besides the superior light absorptance, incident photon-electron conversion efficiency (IPCE), and low irradiative carrier recombination, the simple fabricating process and low costs are both its advantages. However, the perovskite would hydrolyze into PbI2 in a short time after contacting the atmosphere and cause the efficiency of cells decreasing very soon. Moreover, Au electrode would have bad influences on perovskite layers because of the diffusion effect. In the second part of this thesis, I used Cu/Cu2O composite thin film grew by IBS under 60% oxygen pressure and covered the perovskite layer to reduce the bad influences affected by atmosphere and Au electrode. Also, Cu2O is a p-type semiconductor material which has good carrier mobility, band matching with perovskite and low cost so that Cu2O is as a hole transport material.

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