本研究採用改良型態的氧化技術，利用photo-CVD的氘燈於腔體進行低溫氧化反應(< 500℃)，並以網版印刷的方式製作太陽電池。

　　主要討論不同氧化溫度下所生成的SiO2薄膜的品質。利用AFM分析其表面粗糙度；FTIR分析元素鍵結；以及使用C-V量測換算Dit來觀察界面的品質。最後組合PECVD沉積SiNx薄膜來研究其反射和折射率等光學特性，並應用於太陽電池的製程上。

　　在太陽電池的應用上，我們發現使用雙層抗反射層可以增加光線的吸收，以及更良好的表面鈍化效果，從短路電流的數據中，可以得到相同的結果。且使用此氧化法，可以降低一般熱氧化法所需的熱預算。

　　In this thesis, we use the improved method on oxidation. We use D2 lamp and photo-CVD chamber to advance oxidation at lower temperature (<500℃) and use screen-printing technique to produce solar cells.

　　We mainly discuss the quality of SiO2 at different temperatures. We use AFM to measure the roughness of surface, FTIR spectrum to analyze the bonding of elements and C-V measurements to calculate Dit to observe the interfacial quality. Finally, we combine SiO2 with SiNx deposited by PECVD to measure the optical characteristics such as reflectance and refractive index. We also apply it to solar cell fabrication.

　　We find this double layer antireflection coatings can improve the absorption of photons and have better interfacial quality. The measurements of short circuit current also show the same effect and we can use this photo-assist oxidation to reduce the thermal budget compared to common thermal oxidation.

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