為了提升背向散射電子繞射技術在空間解析度的限制，以致可以觀察更為精細的奈米材料，本論文使用穿透式背向散射電子繞射技術來分析純銅，並結合數位影像相關係數法來得到空間解析度。此外，穿透式背向散射電子繞射與傳統的背向散射電子繞射的差異，從收集背向散射電子訊號變成穿透的電子訊號，所以試片放置的位置會所差異，因此首要工作就是要探討工作距離12mm、15mm和18mm以及傾斜角度20度、25度和30度對菊池線的影響，接下來探討加速電壓與試片厚度對空間解析度的影響；加速電壓分別為15kV、20kV、25kV和30kV，試片厚度選擇100奈米、200奈米、300奈米以及400奈米。
首先，試片製備採用聚焦離子束來切實驗所需的試片尺寸，然後進行穿透式背向散射電子繞射分析。為了得到最佳試片位置，首先探討工作距離和傾斜角度的影響；從實驗中發現菊池線會隨著工作距離變小以及傾斜角度變大會往上移動，並且菊池線的寬度會隨著傾斜角度變大而變窄；另外從結果中發現，工作距離為12mm以及傾斜角度20度的條件下，可以得到最佳的菊池線影像品質。
當加速電壓為30kV以及試片厚度為100奈米時，可以得到最佳的X與Y軸解析度，分別為25.2奈米和43.4奈米；而在加速電壓為25kV以及試片厚度為100奈米時，可以得到最佳的Z軸解析度為34.4奈米。當試片越薄，就有越多的電子可以穿透試片到達偵測器；而加速電壓越高，則能量越集中，與試片交互作用的體積就越少，因此從實驗結果中，可以發現隨著加速電壓提高以及試片厚度的減少可以有效的提升穿透式背向散射電子繞射的空間解析度。

In order to improve the spatial resolution limitation of electron backscatter diffraction, in this work we demonstrated a new technique called transmission-electron backscatter diffraction (t-EBSD). Here all t-EBSD specimens with dimensions of 8μm×10μm with different thickness were prepared using focused ion beam (FIB). Furthermore, digital image correlation (DIC) method was employed to obtain the spatial resolutions by comparing the Kikuchi patterns obtained by t-EBSD measurements. These results show that the best quality of Kikuchi pattern is achieved at 12mm working distance under 20o tilting angle. The best resolution of the X (lateral) and Y (longitudinal) axis are 25.2nm and 43.4nm with the 100 nm thickness at 30kV, and the best resolution of the Z (depth) axis is 34.4nm with the 100 nm thickness at 25kV. As increasing accelerating voltage and decreasing sample thickness will enhance the spatial resolution of transmission-electron backscatter diffraction.

1. R.R. Keller and R.H. Geiss, “Transmission EBSD from 10 nm domains in a scanning electron microscope”, Journal of Microscopy, Vol. 245, pp.245-251, 2012.
2. S. Suzuki, “Features of Transmission EBSD and Its Application', Jom, Vol. 65, pp.1254-1263, 2013.
3. F.J Humphreys, I. Brough, “High Resolution Electron Backscatter Diffraction with a Field Emission Gun Scanning Electron Microscope”, Journal of Microscopy, Vol. 195, pp.6-9, 1999.
4. J. Hjelen, E. Nes, “Spatial Resolution Measurements of Electron Backscatter Diffraction Patterns (EBSPs) in the Scanning Electron Microscope”, in : L.D. Peachey, D.B. William (Eds.) XIIth International Congress for Electron Microscopy, San Francisco, U.S. , 1990.
5. S.X. Ren, E.A. Kenik, K.B. Alexander and A. Goyal, “Exploring Spatial Resolution in Electron Back-Scattered Diffraction Experiments Via Monte Carlo Simulation”, Microscopy and Microanalysis, Vol. 4, pp.15-22, 1998.
6. S. Zaefferer, “On the Formation Mechanisms, Spatial Resolution and Intensity of Backscatter Kikuchi Patterns”, Ultramicroscopy, Vol. 107, pp.254-266, 2007.
7. D.R. Steinmetz and S. Zaefferer, “Towards Ultrahigh Resolution EBSD by Low Accelerating Voltage”, Materials Science and Technology, Vol. 26, pp.640-645, 2010.
8. D. Dingley, “Progressive Steps in the Development of Electron Backscatter Diffraction and Orientation Imaging Microscopy”, Journal of Microscopy, Vol. 213, pp.214-224, 2004.
9. P.W. Trimby, “Orientation Mapping of Nanostructured Materials Using Transmission Kikuchi Diffraction in the Scanning Electron Microscope”, Ultramicroscopy, Vol. 120, pp.16-24, 2012.
10. N. Brodusch, H. Demers, M. Trudeau and R. Gauvin, “Acquisition Parameters Optimization of a Transmission Electron Forward Scatter Diffraction System in a Cold-Field Emission Scanning Electron Microscope for Nano-materials Characterization”, Scanning, Vol. 35, pp.375-386, 2013.
11. F.J. Humphreys, “Review Grain and Subgrain Characterisation by Electron Backscatter Diffraction”, Journal of materials science, Vol. 36, pp.3833-3854, 2001.
12. M.N. Alam, M. Blackman and D.W. Pashley, “High-Angle Kikuchi Patterns”, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, Vol. 221, pp. 224-242, 1954.
13. 陳志慶，「背向散射電子繞射技術的空間及角度解析度之探討」，國立成功大學材料科學及工程學系博士論文，2012。
14. A.J. Wilkinson and P.B. Hirsch, “Electron Diffraction Based Techniques in Scanning Electron Microscopy of Bulk Materials”, Micron, Vol. 28, pp.279-308, 1997.
15. J.A. Venables and C.J. Harland, “Electron Back-Scattering Patterns—a New Technique for Obtaining Crystallographic Information in the Scanning Electron Microscope”, Philosophical Magazine, Vol. 27, pp.1193-1200, 1973.
16. T.C. Isabell, V.P. Dravid, “Resolution and sensitivity of electron backscattered diffraction in a cold field emission gun SEM”, Ultramicroscopy, Vol. 67, pp.59-68, 1997.
17. 李彥慧，「探討蒙地卡羅法模擬背向式與穿透式背向散射電子繞射顯微鏡的空間解析度」，國立成功大學材料科學及工程學系碩士論文，2015。
18. S. Babin, S. Cabrini, S. Dhuey, B. Harteneck, M. Machin, A. Martynov, C. Peroz, “Fabrication of 20nm patterns for automatic measurement of electron beam size using BEAMETR technique”, Microelectron Eng, Vol. 86, pp.524-528, 2009
19. J. Goldstein, D.E. Newbury, D.C. Joy, C.E. Lyman, P. Echlin, E. Lifshin, L. Sawyer, J.R. Michael, “Scanning electron microscopy and X-ray microanalysis”, 3rd ed., Kluwer Academic/Plenum Publishers, New York, 2003.