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研究生: 曾至國
Tseng, Chih-Kuo
論文名稱: 參雜Ru、Fe、Mn的Al70Pd22.5Re7.5絕緣態準晶之跳躍傳導現象
Hopping transport in insulating Al70Pd22.5Re7.5 quasicrystal doped with Ru、Fe、Mn elements
指導教授: 林水田
Lin, Shui-Tien
學位類別: 碩士
Master
系所名稱: 理學院 - 物理學系
Department of Physics
論文出版年: 2003
畢業學年度: 91
語文別: 中文
論文頁數: 43
中文關鍵詞: 跳躍傳導準晶
外文關鍵詞: ES hopping VRH, Mott hopping VRH, quasicrystal
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  • 絕緣態的Al70Pd22.5Re7.5準晶其磁阻(Magnetoresistance:MR)行為可由軌域負磁阻理論(Forward interference theory)及正磁阻波函數收縮理論(Wave function shrinkage theory)解釋的很好,且在電阻比(Â=ρ(4.2K)/ρ(300K)) 77時,會由Mott可變程跳躍(Variable-range hopping:VRH)傳導轉變成Efors-Shklovskii(ES)VRH傳導,我們發現當Al70Pd22.5Re7.5分別參雜了Ru、Fe、Mn元素後,因庫倫能隙變大的關係,使得可變程跳躍傳導的轉變會提早發生。

    The magnetoresistance(MR) of insulating Al70Pd22.5Re7.5 quasicrystals (QCs) can be explained well by the forward interference theory and the wave-function shrinkage theories, and there is a crossover from Mott VRH conduction to Efros-Shklovskii(ES) VRH conduction at liquid helium temperature in the Al70Pd22.5Re7.5 QCs with a resistivity ratio Â= 77. We found that when Al70Pd22.5Re7.5 QCs are doped with Ru or Fe or Mn elements, the crossover can occur in the samples with a value of  around 50 because the Coulomb gap is widened greatly.

    摘要 1 誌謝 3 目錄 4 表目錄 5 圖目錄 6 第一章 簡介 9 第二章 實驗儀器與步驟 10 2-1 樣品製作 10 2-2 量測系統 11 2-3 量測磁阻方法 11 2-4 量測電阻方法 12 第三章 磁阻理論 13 3-1 軌域負磁阻理論 13 3-2 正磁阻波函數收縮理論 15 第四章 結果與討論 19 4-1 電導率 19 4-2 磁阻 22 4-3 庫倫能隙的估計 37 4-4 結論 40 參考資料 41

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