本研究回顧了自2004發現石墨烯後的關鍵發展，石墨烯研究起始於一個偶然的發現，當時科學家們利用普通的膠帶從單晶石墨塊中剝離出石墨烯，這個方法看似簡單，卻革命性地取代了以往切割石墨塊技術，從而將石墨烯的獨特性質獻給了世界。2010年，石墨烯的發現因其特殊的物理及化學性質被授予諾貝爾物理學獎，成為首批受到廣泛矚目的二維材料，也因此其他科學家們更致力於探索石墨烯以外的材料，特別是不同能隙的二維材料，以期望追求更多的可能性。隨著人工智能技術的發展，對高速計算晶片的需求激增，使得晶片微縮技術成為全球半導體行業眾所矚目的焦點。業界各大廠商正集中力量解決隨著電晶體尺寸縮小而出現的短通道效應問題，這包括了漏電流的增加、閘極控制力的減弱以及次臨界擺幅的上升。各界學者發現，二維材料因其材料特性，應用在電晶體以減小通道長度、降低短通道效應方面展現出獨特優勢，同時高遷移率也使得電子和電洞能在通道中更快速移動，降低了電阻，從而提高了元件的開關速度。因此，在電子元件領域，二維材料展現出卓越的潛力。另一方面，目前電動車和自動駕駛系統的安全技術蓬勃發展，本文也探討了二維材料在光電元件上的應用潛力。鑑於石墨烯較難穩定控制能隙，因此引進了過渡金屬硫化物（TMDs）作為二維半導體，以期待提升光電元件的表現。最終，本研究介紹了一種磊晶生長技術，能夠製備出大面積、以及垂直堆疊的二維半導體及二維半金屬薄膜，並與傳統半導體製程相互結合，以推動二維材料在實際製品中的應用，開拓更多的使用可能性。

This work examines the major advances in graphene since its discovery by A. Geim and K. Novoselov in 2004. The recovery originated by accident when the scientists fortuitously uncovered that single-crystal graphene could be easily peeled off using adhesive tape as an alternative to traditional cutting methods. This method introduced the unique properties of graphene to the scientific community. Honored with the Nobel Prize in Physics in 2010, the discovery of graphene became the first two-dimensional material to receive widespread attention, demonstrating unprecedented physical and chemical properties, as well as gradually integrating into the daily lives of human beings. With the rise of artificial intelligence, the demand for high-speed computing chips has driven chip miniaturization technology to the forefront of global semiconductor focus. Short-channel effects caused by electronic component miniaturization, such as MOSFET, include increased leakage current, decreased gate control capability, and increased subthreshold swing. With their slim profiles, two-dimensional materials effectively reduce channel length, mitigate short-channel effects, and enhance device performance. Additionally, the high carrier mobility of two-dimensional materials enables faster carrier movement, reducing transmission resistance and improving device switching speed. Combining these advantages, two-dimensional materials demonstrate superior performance in electronic component. This work further explores the application of two-dimensional materials in optical electronics, targeting the safety requirements in electric vehicles and automated driving systems. Considering the lack of energy bandgap in graphene, transition metal dichalcogenides (TMDs) are introduced as two-dimensional semiconductors to enhance optical electronics performance. Finally, this thesis proposes an epitaxial growth method to generate large-area, few-layer device-grade films with conventional semiconductor processes to push the application of two-dimensional materials from the laboratory to practical production, with the expectation of opening up more possibilities.

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