中間能帶太陽能電池除了能夠透過其中間能帶增加短路電流且不降低其開路電壓等優點之外，其光電轉換效率在理論預測上更是超越單一接面的太陽能電池。
本論文中，將分為兩大部分，第一部份為矽或鎂摻雜於錳中間能帶氮化鎵太陽能電池之效應探討；第二部分具氮化鎵錳覆蓋層之蕭基光偵測器之研究。在太陽能電池方面，主動層為氮化鎵錳共摻雜鎂分為兩種結構，一種是以p型氮化鋁鎵為阻擋層，另一種則是以p型氮化鎵作為阻擋層。為了更了解中間能帶的躍遷機制，設計了氮化鎵錳共摻雜矽的主動層。經由光響應量測後，發現氮化鎵錳在共摻雜鎂或矽前後之響應曲線，具有截然不同的響應表現。其三階響應的現象，希望透過此共摻雜矽或鎂，使太陽能電池能夠增加吸收，增加其產生的光電流。實驗的結果和理論機制將在論文中一併說明。
第二部分，則在未摻雜的氮化鎵上，探討不同錳流量的氮化鎵錳覆蓋層對蕭基光偵測器的影響。透過量測蕭基能障，暗電流，光電流及光響應，其實驗結果將在本論文裡做一個詳細的比較與分析。

The intermediate band solar cell is a theoretical concept with the potential for exceeding the performance of conventional single-gap solar cells by enhancing its photo-current via the two step absorption of sub-band gap photons, without reducing its output voltage. The thesis is divided into two parts, one is the study of Si or Mg doping on GaN Solar Cells with Mn-related Intermediate Band, and another one is the study of GaN Schottky-barrier photodetectors with GaN: Mn cap layer. In the study of GaN: Mn co-doping Mg intermediate band solar cell, two types of structure: solar cell with p-AlGaN blocking layer, solar cell with p-GaN blocking layer. In order to realize intermediate band mechanism, we design another structure GaN: Mn co-doping Si of active layer. Compared with Mn-doped GaN-based solar cell, the responsivity spectrum of GaN: Mn co-doping Mg or Si based solar cell had different performance. Mn-doped GaN-based solar cell and GaN: Mn co-doping Mg or Si based solar cell exhibits three-step-responsivity characteristics. Expect that the impurity band of GaN: Mn co-doping Mg or Si could contribute more photocurrent by sunlight. The experiment result and the theoretically mechanism were studied in this thesis.
For the second part, we focus on the u-GaN with different flow rate of GaN: Mn cap layers to fabricate Schottky diode photodetectors. In the text, we selected Ni/Au film as Schottky contact to be evaporated on the structure. After measurement, Schottky barrier height、dark current、photo current and responsivity are determined separately and compared in the different structures.

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