本研究使用了兩種半導體：五環素(Pentacene)與本實驗室自行合成的十三烷基駢苯衍生物
(N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide , PTCDI-C13)。利用此兩種n / p型半導體材料在Polyimide (PI)軟性基板上製作
有機互補式金屬氧化半導體(Organic Complementary
Metal-Oxide-Semiconductor , O-CMOS)，並分析在不同撓曲條件下之CMOS電特性。
第一部份，找出最佳化High-k製程參數以利降低操作電壓。利用PI軟性基板蒸鍍鋁金屬，並對鋁金屬做氧電漿處理，在鋁金屬上形成High-k介電質，利用電容值變化來探討High-k介電質之氧電漿參數的影響而找到最佳條件。
第二部份，對Pentacene表面做氧電漿處理，加上使用複合電極時，擁有最接近理想值(Vs = 1 V)的切換電壓。此外，從表面能、表面電位和EFM的分析中得知，因為經過表面處理後，載子更容易注入到半導體，而將p-type電特性大幅度的提升。
第三部份，探討撓曲狀態下的電特性變化。在曲率半徑為±10 mm、±40 mm之垂直通道、平行通道的條件下，藉由CMOS轉換曲線變化探討元件撓曲10000次的穩定性測試。 研究結果得知： 本實驗室之PI軟性CMOS經過10000次撓曲之後，對元件的電特性表現，並無太大的偏移量。而增益曲線的最高點，卻有小幅度的上升。

Two organic semiconductors, pentacene and N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) was used to fabricated organic complementary metal-oxide-semiconductor O-CMOS) on a polyimide (PI) flexible substrate. To analyze CMOS electrical characteristics under various bending conditions, the first part of this study emphasizes on the optimization of process parameters of high-k dielectrics to reduce the operating voltage. The aluminum metal is deposited on the PI flexible substrate and treated by oxygen plasma to form a high-k dielectric Al2O3 film on the aluminum metal. The measurement of capacitance is performed to explore the effect of dielectric constant enhanced by oxygen plasma parameters to find the best conditions.
Before forming the top electrodes of O-CMOS, the pentacene surface is processed with oxygen plasma that would make the switching voltage (Vs) approaching to the ideal value. Furthermore, from the analyses of surface energy, surface potential obtained by using electric force microscopy (EFM), we find that the carriers are more easily injected into the pentacene semiconductor after surface treatment, and the electrical characteristics of pentacene-based field-effect transistor are also greatly upgraded.
Finally, we try to investigate the changes of electrical properties of O-CMOS under various flexible states and bending times. When the bending direction is parallel and orthogonal to the channel of O-CMOS under radius of curvature of ±10 mm and ±40 mm, the bends of 10,000 times is performed on O-CMOS devices to investigate the changes of transformation curves. The experimental results show that after bending these soft O-CMOS devices, the Vs is closer to the value of VDD/2. Moreover, a few increases are obtained in gain curves.

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