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研究生：	陳文華 Chen, Wen-Hua
論文名稱：	以射頻磁控濺鍍法成長氧化鋅透明導電薄膜 Growth of Zinc Oxide Transparent Conductive Film by RF Magnetron Sputtering
指導教授：	洪昭南 Hong, Chau-Nan Franklin
學位類別：	碩士 Master
系所名稱：	工學院 - 化學工程學系 Department of Chemical Engineering
論文出版年：	2005
畢業學年度：	93
語文別：	中文
論文頁數：	117
中文關鍵詞：	氧化鋅、射頻磁控濺鍍
外文關鍵詞：	AZO, RF magnetron sputtering
相關次數：	點閱：66 下載：4
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　　隨著光電產業的發展，不斷有新材料被發展出來，透明導電膜即是近年來LCD 產業下的熱門材料，而所謂透明導電膜即是一種吸收紫外光、可見光穿透與反射紅外線的材料，傳統上多使用ITO，但因為其成本高昂，所以一直有新材料想取代它，AZO便是一例，在適當條件下可製作出與ITO相媲美之特性且價格低廉，極具競爭優勢。本實驗利用射頻磁控濺鍍(RF reactive magnetron sputtering)系統來沉積AZO(ZnO:Al)薄膜於康寧玻璃基板上，濺鍍條件中固定靶材與基板之距離，採取基板加熱方式、改變工作壓力、改變靶材中鋁的含量、O2 分壓，以進一步探討各變因對所沉積的AZO薄膜之電性、結構、表面型態與光學性質的影響。經由Hall effect measurement、XRD、SEM、UV-Vis、ESCA等儀器分析結果。本實驗針對鋁的摻雜量、O2 分壓的不同、工作壓力的不同、RF功率的不同、鍍膜溫度的不同與基板偏壓的不同對AZO薄膜的電性量測、表面型態、半高寬、晶粒大小與透光率等影響，作了深入之探討。在以上因素交互作用之下，可得最佳參數。

　Radio-frequency magnetron sputtering method has been employed to deposit Aluminum-doped zinc oxide. The mechanism of doping by incorporating Aluminum in zinc oxide was studied. Besides, attempts have been made to deposit at right condition to get zinc oxide film with high conductivity and high transparency in visible light range.

　Aluminum incorporation was demonstrated to be able to enhance the conductivity of zinc oxide significantly. Various properties of Aluminum doped zinc oxide were studied by varying the deposition conditions. Aluminum doped zinc oxide films on corning glass have been prepared by rf reactive magnetron sputtering from targets with different dopant concentrations, oxygen partial pressure, working pressure, RF power and substrate bias. The optical, electric, surface morphology and structure properties of the sputtered ZnO:Al thin films have been investigated by spectroscopy (UV-Vis), X-ray diffraction , SEM , ESCA and Hall effect measurement.

　When the Aluminum composition in the film is too low, the carrier concentration in zinc oxide film becomes low. When the Aluminum composition is too high, the donors in the zinc oxide film will induce electron scattering by the ionized impurities. Therefore, an optimum hydrogen composition exists to minimize the resistivity of the doped zinc oxide film. Radio-frequency power affects the degree of ionization of inlet gas in the plasma, the sputtering yield and the crystallization process, 100W is found to be the optimum power to obtain a high conductivity zinc oxide film.

總目錄
	   頁次
中文摘要…………………………………………………I
英文摘要…………………………………………………II
誌  謝……………………………………………………III
目錄………………………………………………………IV
表目錄 ……………………………………………………X
圖目錄……………………………………………………XI

第一章  緒論………………………………………………1
1-1透明導電膜……………………………………………2
1-2透明導電膜之應用……………………………………6
1-3透明導電膜之製備……………………………………6
1-4 研究動機與目的………………………………………7
1-5氧化鋅薄膜文獻回顧…………………………………7
    1-5-1氧化鋅之晶體結構……………………………7
    1-5-2氧化鋅薄膜摻雜III族元素之電學性質………9
    1-5-3氧化鋅薄膜摻雜III族元素之光………………9
第二章  理論基礎……………………………………… 12                                      
2-1濺鍍原理………………………………………………12
    2-1-1二極濺鍍………………………………………13
    2-1-2偏壓濺鍍………………………………………13
    2-1-3磁控濺鍍………………………………………14
    2-1-4射頻濺鍍………………………………………14
2-2 電漿理論……………………………………………18
2-3薄膜沉積理論…………………………………………25
     2-3-1沉積現象……………………………………25
     2-3-2薄膜表面及截面型態結構…………………26
2-4 透明導電膜的導電性質與光學性…………………28
     2-4-1 透明導電膜的導電原理……………………28
     2-4-2透明導電膜的光學性質……………………30
第三章  實驗參數與研究方法…………………………34
3-1 實驗與分析流程……………………………………34
3-2 儀器設備……………………………………………35
     3-2-1設備圖………………………………………36
     3-2-2射頻電源系統………………………………36
     3-2-3基板偏壓電源系統…………………………36
     3-2-4流量控制系統………………………………36
3-3 實驗材料……………………………………………36
     3-3-1靶材材料……………………………………36
     3-3-2 工作氣體…………………………………37
     3-3-3 基板材料…………………………………37
3-4 實驗步驟……………………………………………37
     3-4-1基板前處理…………………………………37
     3-4-2 實驗步驟…………………………………37
3-5 實驗參數……………………………………………38
3-6 分析與鑑定…………………………………………39
     3-6-1膜厚分析儀器………………………………39
     3-6-2電性分析儀器………………………………40
     3-6-3表面分析儀器………………………………40
     3-6-4結構分析儀器………………………………41
     3-6-5光學性質分析儀器…………………………42
     3-6-6成分分析儀器………………………………42
第四章  結果與討論……………………………………44
4-1前言與薄膜之電性均勻性探………………………44
4-2鋁含量之影響………………………………………46
    4-2-1前言…………………………………………46
    4-2-2膜厚分析……………………………………46
    4-2-3電性分析……………………………………47
    4-2-4晶體結構分析………………………………47
    4-2-5表面形態分析………………………………49
    4-5-6光學性質分析………………………………49
    4-2-7鍵結與組成分析……………………………50
    4-5-8總結…………………………………………51
4-3 氧氣分率影響………………………………………57
    4-3-1前言…………………………………………57
    4-3-2膜厚分析……………………………………57
    4-3-3電性分析……………………………………57
    4-3-4晶體結構分析………………………………58
    4-3-5表面形態分析………………………………59
    4-3-6光學性質分析………………………………60
    4-3-7總結…………………………………………60
4-4 成長壓力之影響……………………………………65
    4-4-1前言…………………………………………65
    4-4-2膜厚分析……………………………………65
    4-4-3電性分析……………………………………66
    4-4-4晶體結構分析………………………………67
    4-4-5表面形態分析………………………………67
    4-4-6光學性質分析………………………………68
    4-4-7總結…………………………………………68
4-5基板溫度之影響……………………………………73
    4-5-1前言…………………………………………73
    4-5-2膜厚分析……………………………………73
    4-5-3電性分析……………………………………73
    4-5-4晶體結構分析………………………………74
    4-5-5表面形態分析………………………………75
    4-5-6光學性質分析………………………………76
    4-5-7總結…………………………………………76
4-6 射頻功率之影響……………………………………80
    4-6-1前言…………………………………………80
    4-6-2膜厚分析……………………………………80
    4-6-3電性分析……………………………………81
    4-6-4晶體結構分析………………………………82
    4-6-5表面形態分析………………………………82
    4-6-6光學性質分析………………………………82
    4-6-7總結…………………………………………83
4-7基板偏壓之影響……………………………………88
    4-7-1前言…………………………………………88
    4-7-2膜厚分析……………………………………88
    4-7-3電性分析……………………………………88
    4-7-4晶體結構分析………………………………89
    4-7-5表面形態分析………………………………90
    4-7-6光學性質分析………………………………90
    4-7-7總結…………………………………………90
第五章  結論……………………………………………95
第六章  參考文獻………………………………………97
自述……………………………………………………102

                                    

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