| 研究生: |
廖文昌 Liao, Wen-Chang |
|---|---|
| 論文名稱: |
微/奈米壓印製程技術及高分子蝕刻障礙材料應用於可撓性顯示器之研究 Study on micro/nano-imprinting lithography techniques and polymeric etching barrier materials for flexible displays application. |
| 指導教授: |
許聯崇
Hsu, Lien-Chung Steve |
| 學位類別: |
博士 Doctor |
| 系所名稱: |
工學院 - 材料科學及工程學系 Department of Materials Science and Engineering |
| 論文出版年: | 2006 |
| 畢業學年度: | 94 |
| 語文別: | 中文 |
| 論文頁數: | 245 |
| 中文關鍵詞: | 顯示器 、OLED 、大尺吋 、流動性 、阻劑 、奈米 、壓印 、成形 、高分子 |
| 外文關鍵詞: | polymer, resist, fluidity, nano, oled, display, large size, molding, imprint |
| 相關次數: | 點閱:90 下載:3 |
| 分享至: |
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本文以壓印技術針對可撓性基材對於熱以及高壓的限制,以三項新型壓印製程改善壓印製程時對基材造成之損害。以”可撓性基材圖案轉移製程” 將軟烤及塗佈步驟分離,最後以接著方式將圖案轉移至可撓性高分子基材PET/ITO上;以混合性模仁搭配感光性高分子阻劑材料進行”高深寬比圖案轉移製作方法”可以有效降低殘餘層厚度以及使用鹼性顯影劑進行殘餘層去除。針對石英模仁以及玻璃模仁製作不易,以透明基材與矽模仁搭配感光性高分子阻劑進行”反向曝光壓印技術”,可使模仁製造時間以及成本有效降低。三項新型壓印製程分別針對模具,蝕刻障礙材料以及基材進行改良,可加速製程速度以及有效降低製程成本,同時均成功轉移出四吋面積之可撓性基材顯示器用圖案。另外,考量加工時之流動性,合成以四系列蝕刻障礙材料:低玻璃轉化溫度壓克力系列,酸性壓克力系列,矽化酸性壓克力以及無溶劑型熱聚合高分子阻抗材料製作以解決可撓性基材於壓印製程中之限制。四種蝕刻障礙材料則針對壓印基材限制進行改良,兼具快速製程及環保考量,同時亦成功在可撓性基材上轉移出面積為四吋之微奈米顯示器及測試圖案。
Three new processes : (1)pattern transferring technique on flexible substrate (2)high aspect ratio pattern transfer by using hybrid mold and (3)back flash imprint lithography were successfully developed for imprint lithography on flexible substrates. They were developed on the consideration of mold fabrication, polymeric materials and the limitation of the flexible substrates .Four new series resists: (1) low glass transition temperature acrylic resists, (2) acidic acrylic resists, (3) silated acidic acrylic resist and (4)solvent-free thermal initiated resist were also successfully prepared for imprinting lithography on flexible substrates. They are not only compatible to the imprinting lithography on flexible substrates but also environmentally friendly .Acidic moiety in the acidic and silated acidic polymers make the rest of the resist be easily removed by aqueous base solution at the last stripping step in imprint lithography. Micron-scaled large area (4inches) and nano-scaled patterns were also completely transferred by using these three processes and three series of resists. Those developed processes and resists make the pattern transfer on flexible substrates possible and could also efficiently enhance the throughput and quality of the imprinting processes.
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