在本論文中，我們利用有機金屬氣相沉積(MetalOrganic Chemical Vapor Deposition)的方式成長氮化鋁銦鎵(AlInGaN)此四元材料做為光檢測器的光吸收層。現今氮化鋁銦鎵此四元的材料尚未有較多的研究，然而在成長氮化鋁銦鎵材料上的鋁含量與銦含量的控制也較不容易，在氮化鋁銦鎵材料中的鋁含量與銦含量的估算也是一個相當大的課題。

我們首先討論分別利用X光繞射分析儀與光激發光譜分析透過符合瓦格定律的計算公式即可約略估算得知在氮化鋁銦鎵材料中的鋁含量與銦含量的多寡，之後再透過X光繞射分析儀的模擬軟體來雙重確認鋁含量與銦含量所計算出來的準確性。接著我們利用有機金屬氣相沉積的方式分別成長不同溫度下的氮化鋁銦鎵此四元材料，進而探討在不同溫度下的氮化鋁銦鎵材料的載子濃度、表面粗糙度、縱深分析、X光繞射分析等特性。

我們也分別比較利用電漿輔助化學氣相沉積和光化學氣相沉積的方法沉積二氧化矽來有效地降低光檢測器的暗電流，透過厚度的改變來觀察其電特性之變化。我們接著利用機金屬氣相沉積的方式成長此氮化鋁銦鎵四元材料成功做成UV波段的光檢測器，其中波段為UV-B 280nm且最大排斥比為32.4。之後我們也嘗試著利用不同的金屬電極和多層結構電極來改善其暗電流特性。

In the thesis, the epitaxial growth of quaternary AlGaInN film used as the absorption layer of a photodetector was performed using metalorganic chemical vapor dep osition (MOCVD). To our knowledge, the AlGaInN related studies so far have not been widely reported. The one of reasons could be due to the difficulty of controlling the compositions of Al and In in AlGaInN film using MOCVD process. In addition, to correctly estimating the composition ratios of Al and In is another technical hurdle which requires a judicious assessment when dealing with these unique quaternary compounds.

First, the PL and X-ray studies were performed in conjunction with use of a formula based on Vegard’s law to estimate composition of Al and In in the AlGaInN. Moreover, XRD simulation was also utilized to double check compositions of Al and In. In addition, relevant studies on determining film surface roughness, depth profiling analysis, and others were performed and discussed.
Thin SiO2 layer were also separately deposited on detectors using the PECVD and photo-CVD to compare their effectiveness on reducing the dark current of photodetectors. The resultant UV AlGaInN photodetectors were successfully fabricated and the corresponding detecting wavelength and rejection ratio were determined as 280nm and 32.4, respectively. Lastly, different metal multilayers were also used and compared as contact electrodes for purpose of reducing the dark current of photodetectors.

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