本論文中，主要以射頻磁控共濺鍍製備氧化鋅鎢非揮發性電阻式隨機存取記憶體的電阻轉換層。本文欲結合有高導電性的氧化鎢以及較大能隙的氧化鋅，以共濺鍍方式製備氧化鋅鎢薄膜作為電阻轉換層。除此之外，通過不同的製程調配以製造不同配方的氧化鋅鎢電阻記憶體樣本，並詳細探討各參數成品差異。
首先，我們探討以銀作為上電極，鉑作為下電極，進行射頻磁控共濺鍍的功率調整，希望研究不同共濺鍍功率比例的氧化鋅鎢薄膜對電阻式記憶體特性的影響。首先固定氧化鎢靶材功率為100W和4%的氧通量，將氧化鋅靶材之功率由40W遞增至100W；接著，再固定氧化鋅靶材為100W將氧化鎢靶材功率由60W遞增到80W，以製備不同功率比之氧化鋅鎢電阻式記憶體樣品。在室温、0.02伏特的讀取電壓下，可以發現當薄膜中氧化鋅成分比例較高時，能些微的減少薄膜中的本質缺陷，使得樣品的高低阻態轉換次數提升到超過1000次，同時也因為氧化鋅具有較高的能隙，開關比能提升到最高10^3，有效改善元件的電性，但也因為氧化鋅與氧結合後的氧化物影響，使得操作電壓顯著上升。接下來通過改變氧化鋅鎢電阻轉換層的厚度，我們希望研究不同電阻轉換層厚度對電阻式記憶體特性的影響。結果顯示，所有元件均表現出雙極性的電阻轉換操作。隨著電阻轉換層厚度的增加，開關比增加。具有150奈米厚度的主動層樣品實現了10^3的開關比，但高低阻態轉換次數1000次以內顯示了過度的膜厚不利電阻絲生成。隨後，通過改變氧化鋅鎢主動層的氧氣通量比（O2/O2+Ar），以研究不同氧通量比例的氧化鋅鎢薄膜對電阻式記憶體特性的影響。結果顯示，所有元件均表現出雙極性的電阻轉換操作。隨著濺鍍的通氧比例增加，電阻轉換更加穩定，高低阻態轉換的次數也隨之增加，分別來到10^2和超過1000次，但在超過10%後元件的開關比和轉換次數便顯著降低，顯示過量的氧化對主動層電阻絲造成不利的影響。我們也由測量結果配合XPS分析發現，射頻濺射過程中適當增加氧通量比例，可以減少氧化鋅鎢薄膜中的先天缺陷(氧空缺)，降低了導通路徑的複雜度，使得操作電壓下降，提升電阻記憶體的穩定性與耐用度。下個部份，我們在上電極採用鋁、鎳、銅、銀等不同金屬，下電極統一使用鉑的情況下，氧化鋅鎢記憶體的電特性以及製備方法。實驗結果表明，在直流操作下，這些樣品表現出雙極性特性，而不同的電極對元件的電阻切換特性和導電機制也有不同的影響。以銀作為上電極的電阻式記憶體具有最高的大於1000次的高低組態轉換次數、高達10^2的開關比、最低的操作電壓，以及循環間最小的高低態變動，且在室温中、0.02伏特讀取電壓下，也達成了保持高低阻態10^4秒的穩定記憶能力。以鎳作為上電極的電阻式記憶體具有最高的操作電壓，以及循環間最大的電壓變動。最後，我們也測量了在不同限電流下對元件的影響，結果顯示在提高限電流到20mA時，低阻態的數值會跟著降低，顯示電阻絲有變粗的趨勢。過粗的電阻絲會造成操作電壓提升進而影響元件壽命，因此仍舊以10mA所得元件最有優勢。

In this thesis, we mainly use radio frequency magnetron co-sputtering to prepare the resistance switching layer of zinc tungsten non-volatile resistive random-access memory (RRAM). We aim to combine highly conductive tungsten oxide with wider bandgap zinc oxide and prepare ZWO thin films as the resistance switching layer through co-sputtering of shared targets. Furthermore, by adjusting different process parameters, we manufacture ZWO resistance memory samples with various formulations and thoroughly investigate the differences in the finished products. Firstly, we explore the effect of different co-sputtering power ratios of tungsten oxide zinc films on the characteristics of resistive memory, using silver as the top electrode and platinum as the bottom electrode. Initially, the WO3 target power is fixed at 100W with 4% oxygen flow ratio, and the power of the zinc oxide target is increased from 40W to 100W. Subsequently, the zinc oxide target is fixed at 100W while the WO3 target power is increased from 60W to 80W, to prepare resistance switching memory samples with different power ratios of tungsten oxide zinc. It can be observed at room temperature and 0.02 volts read voltage that when the zinc oxide composition in the film is relatively high, there is a slight reduction in intrinsic defects in the film. This leads to an increase in the number of resistance state cycles to over 1000. Additionally, due to the higher bandgap of zinc oxide, the switching ratio can reach up to 10^3, effectively improving the device performance. However, the presence of oxide formed from the combination of zinc and oxygen significantly raises the operation voltage. Next, by varying the thickness of the tungsten oxide zinc resistance switching layer, we aim to study the impact of different resistance switching layer thicknesses on the characteristics of resistive memory. The results show that all devices exhibit bipolar resistance switching operation. With increasing resistance switching layer thickness, the switching ratio also increases. The sample with a thickness of 150 nanometers in the active layer achieves a switching ratio of 10^3. However, the high-low resistance state transitions are lower than 1000 times, indicating that excessive film thickness is unfavorable for resistive filament formation. Then, by changing the oxygen flow ratio (O2/O2+Ar) of the tungsten oxide zinc active layer, we hope to study the effect of different oxygen flow ratios of the thin film on the characteristics of resistive memory. The results show that all devices exhibit bipolar resistance switching operation. With the increase of oxygen ratio in the sputtering process, the resistance switching becomes more stable, and the number of resistance state transitions also increases, reaching 10^2 and over 1000 times respectively. However, after exceeding 10%, the switching ratio and transition cycles of the devices significantly decrease, indicating that excess oxidation has an adverse effect on the resistive filament in the active layer. Through measurements and XPS analysis, we find that appropriately increasing the oxygen flow ratio during RF sputtering can reduce inherent defects (oxygen vacancies) in the tungsten oxide zinc film, reducing the complexity of conduction pathways, leading to a decrease in operation voltage, and ultimately enhancing the stability and durability of the resistive memory. In the next section, we study the electrical characteristics and preparation methods of zinc tungsten memory with different metals such as aluminum, nickel, copper, and silver as the top electrode, and platinum as the bottom electrode. Experimental results demonstrate that under direct current operation, these samples exhibit bipolar characteristics. Among them, the resistive memory with silver as the top electrode achieves the highest number of resistance state transitions, exceeding 1000 times, a switching ratio of up to 10^2, the lowest operation voltage, and the smallest resistance state variation between cycles. Moreover, it also achieves stable memory retention for 10^4 seconds at room temperature and 0.02 volts read voltage. The resistive memory with nickel as the top electrode exhibits the highest operation voltage, as well as the largest voltage variation between cycles. Finally, we also measure the effect of different compliance current on the devices. The results show that when the compliance current is increased to 20mA, the value of the low-resistance state decreases, indicating a trend of thickening of the resistive filament. Overly thick resistive filaments will lead to an increase in operation voltage and affect the lifespan of the device. Therefore, the device obtained with 10mA still has the advantage.

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