本論文提出應用雷射剝離技術與電鍍技術於氮化鎵發光二極體改善元件的光電特性與提高發光二極體的亮度，降低操作電壓。

　　氮化鎵發光二極體目前已經可以運用雷射剝離技術將其與藍寶石分離後，再轉移到銅或是其他散熱良好的基板。不過，目前的製作方式過於複雜耗時。所以為了簡化製作程序與改進發光二極體的散熱情況，我們提出一個更簡易的元件製程，僅需要經過一次微影製程，大幅降低既有的製作程序，並降低成本。詳細的製作程序將在論文中介紹。

　The objective of this thesis is to introduce innovative approaches to improve the performance of GaN LEDs. The device performance can be improved in terms of brightness, and operating voltage by using laser lift off technique and Electroplating.

　GaN LEDs can be transferred from sapphire onto copper substrate by LLO, wafer bonding, and Electroplating. However, the process of fabricating GaN LEDs on copper is far too complex, and hard to simplify.

　In this dissertation, we present the large-area vertically conductive GaN LEDs on copper substrate with only one mask process. This device is fabricated using laser lift-off and electroplating techniques. However, our method is comparably simpler among all techniques previously introduced. Details on the large-area vertical conductive GaN LEDs on copper substrate device performance will be discussed in this thesis.

Chapter 1
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Chapter 3
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