本研究使用快速熱退火製程讓奈米鋁金屬誘發矽結晶，共準備15個試片，試件結構為a-Si/Al/a-Si/SiO2/Glass，設計不同厚度的a-Si/Al/a-Si三明治結構可以增加鋁元素往兩邊矽層擴散的效率，導致載子遷移率提高。熱退火後影響鋁誘發矽結晶百分比的參數包括：改變試片頂層矽、中間層鋁、底層矽厚度與退火溫度。薄膜內鋁的擴散情形也是探討重點，其中鋁元素向左右兩邊矽層的擴散情形，隨著最大壓應力變化 ( )增加而鋁擴散深度增加。定義新參數PC，PC值為用來判斷薄膜內矽結晶品質好壞，其值為矽結晶百分比與矽平均晶粒大小的乘積(Product, PC)，PC值隨著退火後應力變化( )增加而提高，且對於有孔洞的試片而言載子遷移率與退火後應力變化兩者呈線性關係。若要避免薄膜產生孔洞，則薄膜含鋁百分比( )增加時，退火後應力變化( )也要跟著提高。產生孔洞的兩個必要條件為退火溫度足夠高及薄膜含鋁百分比( )足夠大。當薄膜具有孔洞時，增加退火後應力變化( )可以降低薄單位面積孔隙率膜孔隙率(R*)，單位面積孔隙率下降可導致載子遷移率提高。合適的三明治結構設計能在低溫(400℃)製程下製作多晶矽薄膜，並可應用於薄膜太陽能電池或主動矩陣發光二極體。

In the present study, 15 kinds of the a-Si/Al/a-Si/SiO2/Glass specimen were prepared in order to investigate the Al-induced Si crystallizations after applying annealing. The composite film of a-Si/Al/a-Si is arranged in the sandwich form in order to improve the efficiency of Al diffusions into its two adjacent Si layers, and thus resulting in the increase in the specimen’s carrier mobility. Si crystallizations were carried out at the conditions including the changes in the thicknesses of the top and bottom Si layer and the middle Al film, and the annealing temperature. Al diffusion depths on its two sides is increased with increasing the max compressive stress change in the diffusion direction. The degree of Si crystallizations in terms of the product (PC) of the Si crystalline fraction and the mean grain size. The PC value is elevated by increasing the ( ), and specimen’s carrier mobility is linearly increased by increasing ( ). In the specimens without nanovoids, the ( ) value is presented to be increased proportional to . A sufficiently high annealing temperature in combination with sufficiently large become the prerequisite conditions of nanovoids created in the composite film. The increases in the ( ) leads to the reduction of R* value, thus resulting in the elevation of specimen’s carrier mobility. Appropriate thickness designs for the sandwich structure can achieve high Si crystallizations even operating the annealing process as low as 400 °C. High-quality poly-Si is an essential material for high-efficiency thin-film solar cells or AMOLED.

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