吾人在以鉿(Hf)為基底的高介電常數氧化層上加入釓(Gd)覆蓋層以降低碳化鉭(TaC)金屬閘極的功函數以及臨界電壓。然而釓原子卻會透過該高介電常數氧化層擴散到基版，造成我們所不希望看到的缺陷。因此我們利用後續氮化處理來減少缺陷的產生以及降低閘極漏電流。但後續氮化處理中電漿也會促成氮原子擴散到釓覆蓋層並在閘極上方堆積及阻擋釓原子，進而產生本體缺陷造成元件正偏壓溫度不穩定性(PBTI)的劣化。我們觀察在釓覆蓋層中氮原子的擴散行為同時透過二次離子質譜儀、低頻雜訊分析和電荷幫浦量測系統檢查該高介電常數薄膜元件中缺陷的位置。
此外，藉由控制矽鍺通道和矽覆蓋層的厚度來抑制鍺原子的擴散同時將載子侷限在應變矽鍺層，並且避免在表面產生嚴重的寄生通道。藉由最佳化的通道厚度比例設計，我們可得到比高介電常數薄膜搭配金屬閘極結構的矽通道元件更高性能與可靠度的P型矽鍺通道金氧半場效電晶體。除此之外，我們還提出在沉積鉿氧化層(HfO2)後，以通氧氣退火的方式來提升元件的可靠度。實驗結果顯示，以通氧氣做後續沉積退火的方式不會退化元件的驅動電流和等效氧化層厚度。並且明顯的改善包含正偏壓溫度不穩定性、負偏壓溫度不穩定性和與時間相依的介電質崩潰測試等可靠度。

Gadolinium (Gd) cap layer on the Hf-based high-k dielectric is proposed to reduce effective work function (EWF) and threshold voltage (VTH) of TaC metal gate. However, Gd could diffuse through Hf-based layer into substrate to cause unwanted damages, thus, needing a post NH3 nitridation to suppress these unwanted damages and decrease gate leakage current. Besides, even a NH3 nitridation could improve devices’ performances; however, the nitrogen atoms incorporated in the gate stack via the NH3 plasma treatment could also diffuse into the Gd-cap layer, thus blocking the Gd ions at the top of the Hf-based high-k/metal-gate, which then generate bulk charges to degrade the device’s positive bias temperature instability (PBTI) significantly. We identify the diffusion of nitrogen in the Gd cap layer, as well as the location of trap defects in the Hf-based high-k/metal-gate with secondary ion mass spectrometry (SIMS), flicker noise, and charge pumping measurements.
Furthermore, we report the optimism channel stack thickness ratio by controlling strained SiGe and Si cap layer thickness to overcome Ge diffusion and confine carriers in strain SiGe layer without formation of a significant parasitic channel at the interface. By optimizing the channel thickness ratio, we achieved higher performance and better reliability Hf-based high-k/metal gate SiGe pMOSFET compared to gate stack on Si channels. Moreover, a post deposition annealing (PDA) including oxygen ion after high-k dielectric deposition was used to improve reliability of the Hf-based high-k/metal gate device. Experiment results showed that the oxygen PDA didn’t degrade the drive current and effective oxide thickness of the Hf-based gate devices. In addition, reliability issues such as PBTI, NBTI and time dependent dielectric breakdown (TDDB) were also improved by the oxygen PDA significantly.

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