本論文主要探討源極與氧化銦鎵鋅通道層之表面態位密度於氧化銦鎵鋅薄膜電晶體特性之影響，並提出使用氧電漿處理改善源極與氧化銦鎵鋅通道層缺陷的方法。習知改善表面缺陷的各項製程中，尤以高溫退火最為廣泛使用，但缺點為較高溫的製程並不適用於可撓式基板，且其全面性的熱處理及較高的thermal-budget 皆可能使得元件特性劣化。
使用氧電漿製程處理氧化銦鎵鋅薄膜電晶體之源極接面，以改善此接面之表面態位密度，實驗結果發現，於氧電漿處理時間及製程功率分別為30秒與100 W，可得最佳的元件特性，其關閉電流與次臨界擺幅分別改善至4.13×10-5 A與0.119 V/dec。
本論文成功於室溫環境下，利用氧電漿處理製程提升氧化銦鎵鋅薄膜電晶體之特性，於關閉電流、次臨限擺幅與電流開關比皆有明顯改善。此氧電漿處理製程，具有簡單、大面積、快速及低溫製程之優點，除可應用於玻璃基板及軟性基板上，亦可使用於大尺寸之面板，於未來顯示技術(AMLCD或AMOLED)與軟性電子產品的應用深具研究與發展潛力。

The effect of O2 plasma treatment on amorphous indium gallium zinc oxide (-IGZO) thin films was investigated. The turn off leakage current (6.1×10-12 A) of the -IGZO thin films dramatically decreased upon their exposure to the O2 plasma compared to that (2.39×10-11 A) of the as-deposited thin film. We attempted to reduce the source and channel interface defect by using the O2 plasma treatment. Those interface defects provide the leakage path, so the fewer surface defects can be expected to effectively reduce the leakage current. Without the treatment, the -IGZO thin film transistors (TFTs) with W/L=500 μm /50 μm exhibited a saturation mobility(μsat) of 2.81 cm2V-1 s-1, subthreshold gate swing (SS) of 0.148 V/ decade, turn off current (Ioff) of 2.39×10-11 A, and Ion/off ratio of 2.6×106. The device performance of the -IGZO TFTs was significantly improved by the O2 plasma treatment. As a result, an excellent SS value of 0.119 V/decade and lower turn off current of 6.1×10-12 A, as well as a high Ion/Ioff of 6.77×106, were achieved for the treated -IGZO TFTs.

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