在現今AI深度學習技術的進步推動了物聯網智慧家居、6G通訊與低碳技術的深度融合，此趨勢已成為當代科技發展的核心驅動力。本研究中以新型半導體材料碳量子點薄膜進行製程上的改良，利用聚苯乙烯微球和氧電漿蝕刻在奈米尺度上進行圖案化製程，最終實現了具有三維幾何形貌的碳量子點單體陣列，並且通過調整蝕刻參數能在一定程度上控制單體的形貌以及尺寸大小藉由微結構和FDTD光學模擬軟體的輔助下來對其光學特性在一定程度上實現精準調控，對於光學上具有窄帶吸收和發射的CQDs具有重要意義。
本研究提供一種新型的對碳量子點物理調控的製程方法，在氧電漿蝕刻下通過聚苯乙烯微球作爲遮罩對合成的CQDs薄膜進行選擇性蝕刻形成一層具有幾何形貌的六方陣列圖案化結構薄膜層。並可藉由選用直徑為300 nm 和400 nm的聚苯乙烯微球遮罩以及30 s,60 s,65 s,75 s,80 s,100 s不同的蝕刻時間來調控微結構，通過Raman，XPS和FTIR分析圖案化蝕刻前後的變化，發現其奈米級深度表面含氧官能基在強氧化性的氧電漿會被進一步氧化，而碳碳雙鍵也會部分轉化為碳碳單鍵，而在整體碳量子點結構變化並不明顯。此結果在一定程度上説明圖案化製程能夠物理調控形貌的同時，對化學性質的影響不顯著。在300 nm PS球遮罩組40 s-100 s和400 nm PS球遮罩組65 s-100 s的時間區域內其圖案化單體呈現有一定規律變化的錐狀結構，在紫外綫/可見光分光光譜儀的量測反射率的結果出現了連續化的偏移現象並與FDTD模擬結果相擬合。

This study developed a novel nanoscale patterning process for carbon quantum dot (CQD) films using polystyrene (PS) microsphere masks and oxygen plasma etching. This technique creates a three-dimensional hexagonal array of CQD monomers. Monolith morphology and size are controlled by selecting PS microsphere diameters (300 nm or 400 nm) and varying oxygen plasma etching times (30 s to 100 s).Analysis via Raman spectroscopy, XPS, and FTIR revealed that etching under strong oxidizing plasma increases surface oxygen functional groups at nanoscale depths and partially converts carbon-carbon double bonds to single bonds. Crucially, the core structure of the CQDs remains largely unaltered, indicating the process primarily enables physical morphology regulation with minimal impact on intrinsic chemical properties. Specifically, conical monomer structures emerged with regular changes in the 300 nm PS group etched from 40 s to 100 s and the 400 nm PS group etched from 65 s to 100 s. UV/Vis spectrophotometry measurements demonstrated a continuous shift in reflectance corresponding to these structural changes. This shift was consistent with optical simulations performed using FDTD software, confirming the ability to precisely tune the optical properties of the patterned CQD arrays. This physical regulation is particularly significant for applications requiring narrowband absorption and emission from CQD materials.

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