本研究旨在探討利用無鉛全無機鈣鈦礦材料Cs3Bi2Br9製作的新型光感應阻變隨機存取記憶體（RRAM）元件，專門針對各類物聯網（IoT）應用進行優化，例如汽車系統與智慧感測器。研究結果顯示，基於Cs3Bi2Br9的 RRAM 元件在穩定性、光敏感度以及記憶保持能力方面均表現卓越。我們透過引入量子點技術，顯著提升了元件的多級存儲能力、耐久性和數據保持性能。本研究開闢了針對 IoT 的先進記憶體解決方案的新方向，展示了此類元件在未來智能系統和汽車技術中的應用潛力。後續研究將集中在材料性能優化、元件結構改進及其可擴展性，以滿足現實世界中 IoT 應用的需求。

In this study, we investigate the development of a novel photo-sensing resistive random access memory (RRAM) device using lead-free all-inorganic perovskite material Cs3Bi2Br9. Our research focuses on creating environmentally friendly and high-performance memory devices suitable for various Internet of Things (IoT) applications, including automotive systems and smart sensors. The Cs3Bi2Br9-based RRAM devices demonstrate excellent stability, high sensitivity to light, and reliable memory retention. Key findings include significant improvements in electrical performance, such as enhanced multi-level storage capability, endurance, and data retention, achieved through the incorporation of quantum dots. This study opens new avenues for the development of advanced memory solutions tailored for IoT, emphasizing the potential for integrating these devices into future smart systems and automotive technologies. Future work will concentrate on optimizing material properties, device architecture, and scalability to meet the demands of real-world IoT applications.

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