本研究主要探討經由氨化處理具高方向性之Ga2O3奈米線，以製備一維氮化鎵奈米結構。首先以Vapor-Solid-Liquid (VLS)-化學氣相沉積法，在氧化鋁基板上成長高方向性的氧化鎵奈米線。爾後，於900℃、760torr下之高溫爐中，通入氨氣， 以不同的時間氨化處理高方向性氧化鎵奈米線，並以SEM、EDS、XRD、TEM及EELS 等分析研究其轉變為一維氮化鎵奈米結構的過程。根據分析結果顯示，經15分鐘氨化處理後，可形成具有氧化鎵間隔之高方向性一維氮化鎵多孔奈米結構。當進一步於高於700℃之溫度下以氮氣回火時，由TEM高倍影像觀察得知，隨著回火溫度升高，部份一維氮化鎵奈米結構轉變成氮化鎵之奈米管之比例隨之增多。

　　Well-aligned one-dimensional(1D) GaN nanostructures have been formed by ammoniating well-aligned Ga2O3 nanowires. ß-Ga2O3 nanowires were first synthesized on a sapphire substrate by VLS mechanism using single organometallic precursor. Ammoniating of the well-aligned Ga2O3 nanowires were performed under the following conditions: pressure, temperature, NH3 flow rate of 760 torr, 900℃ and 400 sccm, respectively, for various ammoniating conversion periods. Structural analyses indicate that well-aligned 1-D GaN porous nanostructures with Ga2O3 nodes were formed after 15 minutes ammoniating. Further annealing of the 1-D GaN nanostructures were conducted at N2 ambient for quality improvement. HR-TEM analyses reveal the formation of the GaN nanotubes after 30 minutes annealing at a temperature higher than 700℃。

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