本論文使用磁控濺鍍系統製備多鐵性複合薄膜鐵酸鉍(BiFeO3)+鎳鋅鐵氧(Ni0.5Zn0.5Fe2O4)於鎳酸鑭 (LaNiO3)底電極上，探討以鎳酸鑭緩衝層的柱狀晶微結構減緩來自基板的箝制效應 (Clamping effect)，進而提升磁電係數 (αE)。
鎳酸鑭藉由調控製程參數，在工作壓力50 mtorr，氧分壓6.25 mtorr的環境中，以80W在溫度從350 到750度生長後於管爐中以全氧的氣氛下於600度退火1小時提升熱穩定性與導電率，其導電率約落在102 (Ω-1cm-1)。並以原子力顯微鏡驗證其柱狀直徑從450度的49.7 nm增加到750度的97.3 nm，而表面粗度(Ra)也從1.50增加至2.96 nm，之後以此基準條件下進行柱狀晶結構的生長區間之研究。
在氧分壓的調控中，於氧分壓4.25與9.375 mtorr下得到柱狀晶結構且無雜項生成。接著進行工作壓力的探討，於工作壓力在32mtorr下得到具有柱狀晶的鎳酸鑭純相，而20mtorr與10mtorr 因為La:Ni比例偏移劑量比造成鍍率降低而失去柱狀晶特徵且生成雜相。藉此結果證明影響柱狀晶結構的因素主要為工作壓力，而溫度與氧分壓無法決定其形成與否，卻影響其柱狀直徑。
多鐵性複合薄膜鐵酸鉍 + 鎳鋅鐵氧以雙靶磁控濺鍍的方式，沉積於LNO/Si上，其中鎳酸鑭分別使用兩種不同直徑的柱狀晶，其直徑約60.0與97.3 nm，而兩者分別使用磁控濺鍍系統於氧分壓6.25與9.375 mtorr沉積而得，藉由SEM的截面圖下證實鎳酸鑭緩衝層約為200 nm。而從低掠角繞射圖中可以證實無論是複合薄膜或是緩衝層都以多晶的方式生長，而鐵酸鉍與鎳酸鑭具有較佳的晶格匹配度，在特定成長條件的鐵酸鉍上呈現(110)的擇優取向，但鎳鋅鐵氧因為無基板，溫度等條件下幫助導致結晶性較差，而經由磁滯曲線與TEM加以證實亞鐵磁相的存在，其中飽和磁化量(MS)在4 kOe下都約為39.50 (emu/g)，而交換偏置(HEX)在室溫下分別為3.05與8.61 Oe，矯頑力(HC)則分別為39.80與70.81 Oe，而交換偏置則證實BFO/NZFO界面無擴散等化學反應。TEM的圖像觀察結果表示多鐵性複合薄膜是為顆粒-矩陣型(0-3 type)，鎳鋅鐵氧以顆粒的方式鑲嵌於鐵酸鉍中。
在磁電係數的量測中，電壓量測的方向固定為垂直基板，而直流磁場及交流磁場的方向保持相同，藉由調整磁場方向垂直或平行基板來進行αE,L (L-T mode)與αE,T (T-T mode)的係數量測。在細柱狀晶 (60nm) 與細柱狀晶 (97.3nm) 的鎳酸鑭上分別都成長兩種不同厚度的複合薄膜，各為210與300 nm。αE,T在四個結果中都大於αE,L，藉此證明柱狀晶明顯改善in-plane的殘留應力。而隨著厚度增加，晶粒磊晶造成於out-plane的殘留應力也隨之降低，同時使αE,L 降低而提升αE,T的磁電響應。在細柱狀晶上成長的複合薄膜中，BFO具有(110)的擇優取向，此in-plane的殘留應力使αE,L 在零偏壓場下有較大的值，並隨著厚度增加而得以減緩。αE,L在複合薄膜為210 與300 nm時，在共振頻率4 kHz以及無偏壓場下分別為2.056和1.292 (V·Ohm-1cm-1)，並且在f = 1kHz下分別在外加偏壓場1.25和2kOe時為1.073和1.032 (V·Ohm-1cm-1)。而αE,T 因為柱狀晶的效果使其值大於αE,L，在複合薄膜為210 與300 nm時，在共振頻率4 kHz以及無偏壓場下分別為2.759和3.071 (V·hm-1cm-1)，並且在f = 1kHz下分別在外加偏壓場2.25和3.75kOe時為1.419和1.442 (V·Ohm-1cm-1)。

A multiferroic composite film with a combination of ferrimagnetic Ni0.5Zn0.5Fe2O4 (NZFO) and multiferroic BiFeO3 (BFO) was grown on the LaNiO3 (LNO) buffered Si (001) substrate using dual-target RF magnetron co-sputtering. LNO polycrystalline films were prepared for a nanocolumnar structure and were confirmed with SEM. The effect of temperature, partial oxygen pressure (pO2), and working pressure are presented here, where at a lower working pressure, 10 and 20 mtorr, no columnar structures devoloped due to a deviated Ni/La ratio. In response to changes in temperature, the columns become finer as temperature decreased. The diameters of the columns were 59.4, 69.0 and 97.3 nm at 550, 650 and 750oC, respectively, as measured using AFM. Higher pO2 revealed fine columns, which was confirmed via SEM. Such a nanostructure is expected to minimize the “substrate clamp” problem that limits the applications of this type of composite films. BFO + NZFO composite films were deposited on columnar structures with different diameters. Exchange bias was provided to ensure there was no interfacial diffusion between the composite were BFO particles embedded in the NZFO matrix, as confirmed with TEM. The longitudinal coefficient (αE,L) and transverse coefficient (αE,T) were measured. All results showed αE,T to be larger than αE,L. BFO and LNO showed grain epitaxy cause higher αE,L that decreased with increases in thickness. This residual strain was relaxed by the columns in the in-plane direction; thus, αE,T enhanced as thickness increased. For composites deposited on LNO of the fine columns, αE,L and αE,T are 2.056 and 2.759 V·Ohm-1cm-1 under a 0 bias field at the resonance frequency of 4 kHz, as the thickness increased to 300 nm, and the αE,L and αE,T are 1.292 and 3.071 V·Ohm-1cm-1 under a 0 bias field at the resonance frequency of 4 kHz.

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