本論文利用低溫氣相冷凝系統製作一系列的氧化鋅系列薄膜與奈米柱，並成功應用於紫外光檢測器。藉由低溫氣相冷凝系統具有多個蒸鍍源的設計，利用共蒸鍍成長高品質低缺陷之p型、本質以及n型氧化鋅，製作出純氧化鋅材料之p型氧化鋅/i型氧化鋅/n型氧化鋅紫外光檢測器，其在波長為360 nm時具有最高的響應度，能夠有效應用於UV-A波段之紫外光檢測器，在偏壓為-1 V時，其紫外光(360 nm)對可見光的拒斥比為2.82×103，等校雜訊功率以及檢測度分別為1.70×10-10 W以及5.53×1011 cmHz1/2/W。接著以低溫氣相冷凝系統製作主動吸收層為氧化鎂鋅之p型氧化鋅/i型氧化鎂鋅/n型氧化鎂鋅紫外光檢測器元件，其元件在波長為310 nm時有最佳的響應度，適合應用於UV-B波段之紫外光檢測器，在偏壓為-1 V時，其紫外光(310 nm)對可見光的拒斥比為3.60×103，等校雜訊功率以及檢測度分別為9.50×10-12 W以及3.16×1012 cmHz1/2/W。並利用低溫氣相冷凝系統進行氧化鋅與二氧化矽進行共蒸鍍，成功製作出能隙為4.5 eV之氧化矽鋅薄膜，利用其作為元件主動層進行p型氧化鋅/i型氧化矽鋅/n型氧化鋅紫外光檢測器元件，在偏壓為-5 V時，其紫外光(270 nm)對可見光的拒斥比為1.01×104，等校雜訊功率以及檢測度分別為3.54×10-12W以及2.67×1011 cmHz1/2/W，能有效應用於UV-C波段的紫外光檢測器。為了更進一步提升氧化鋅系列紫外光檢測器之特性，利用低溫氣相冷凝系統成長p型、i型以及n型氧化鋅奈米柱製作陣列式氧化鋅奈米柱紫外光檢測器，與其它形式的光檢測器相比，此陣列式奈米柱光檢測器具有高效率增益的優點，但由於奈米柱結構的表面缺陷會降低元件特性，本研究利用光電化學氧化法進行氧化鋅奈米柱表面披覆改善其特性，比較不同處理時間之元件特性，以及對其機制進行探討，在經過光電化學氧化法2分鐘處理元件具有最佳的特性，其檢測度達3.25×1015 cmHz1/2/W。進一步應用氧化鋅系列光檢測器，成功製作了雙波段氧化鋅/氧化鎂鋅紫外光檢測器，該元件由氧化鎂鋅奈米柱光檢測器以及氧化鋅薄膜式光檢測器並聯堆疊而成，藉由兩者吸收層為不同能隙之特性，使其元件在波長為310 nm 以及 360 nm 皆能具有檢測的作用，其響應度在偏壓為-5伏特時，於波長為310 nm以及360 nm分別為196.0 A/W和 0.70 A/W，其元件於310 nm以及360 nm檢測度分別達9.67×1013以及3.41×1011，皆能達到檢測的目的。

In this dissertation, the Zinc oxide (ZnO)-based thin film and nanorod were deposited using vapor cooling condensation system and successfully applied to ultraviolet (UV) photodetectors. The vapor cooling condensation system with multiple evaporation sources designed to co-evaporate to deposited related p-type ZnO (p-ZnO), intrinsic ZnO (i-ZnO), and n-type ZnO (n-ZnO). The homojunction p-i-n ZnO-based UV photodetectors was deposited using the vapor cooling condensation system. The rejection ratio between the ultraviolet and the visible was 2.82×103 measured at a reverse bias of -1V. The low-frequency noise, which was dominated by the flicker noise, exhibited the noise equivalent power of 1.70×10-10 W and the high detectivity of 5.53×1011 cmHz1/2/W with the illumination wavelength of 360 nm at the reverse bias voltage of -1V. This photodetector can effectively detect the UV-A wavelength. Then, The heterostructured thin films of the solar blind p-ZnO:LiNO3/i-MgZnO/n-MgZnO:In UV photodetectors were deposited using the vapor cooling condensation system. The photodetectors exhibited and absorption cut-off wavelength of 310 nm and did not response in the visible wavelength range. A high rejection ratio of 3.60×103 were measured when a reverse bias voltage of -1 V was applied. The associated photoresponsivity of 0.2 A/W, the noise equivalent power of 9.50×10-12 and the specific detectivity of 3.16×1012 cmHz1/2/W were obtained. This photodetector can effectively detect the UV-B wavelength. The Si doping ZnO (SiZnO) film were deposited by co-thermal ZnO and SiO2. The p-ZnO:LiNO3/i-SiZnO/n-ZnO:In (p-i-n) ZnO-based solar blind photodetectors were deposited by vapor cooling condensation system. The ultraviolet (270 nm)/VIS (420 nm) rejection ratio of 1.01×104 was obtained. The dominant noise was flicker noise. Furthermore, the noise equivalent power of 3.54×10-12 W, and the specific detectivity of 2.67×1011 cmHz1/2/W were obtained, when the photodetectors operated at a reverse bias voltage of −5 V. This photodetector can effectively detect the UV-C wavelength. In order to improve the ZnO-based photodetectors detectivity, the structure of the ZnO-based p-ZnO:LiNO3/i-ZnO/n-ZnO:In nanorod ultraviolet (UV) photodetectors was grown using the vapor cooling condensation system. To study the internal gain mechanisms of the photodetectors, the ZnO-based nanorods were photochemically passivated for different time and operated under various environments to vary the defect density resided on the sidewall surface of the ZnO-based nanorods. The mechanisms of the internal gain, which was attributed to the surface band bending effect of the ZnO-based nanorods induced from the sidewall surface defects and the absorbed oxygen molecules, were thus derived. The specific detectivity of 3.25×1015 cmHz1/2/W was obtained for the ZnO-based nanorod UV photodetectors treated with the photoelectrochemical passivation process for 2 min. To extend wavelength sensing limitation, dual-band ultraviolet photodetectors (UV-PDs) were studied. The dual-band UV-PDs were constructed by stacking MgZnO nanorods on ZnO film. The wide ultraviolet wavelength from 250 nm to 360 nm could be responded by the proposed dual-band UV-PDs. When a reverse bias voltage of -5 V was applied, the responsivity at 310 nm and 360 nm was 196.0 A/W and 0.70 A/W, respectively. The noise equivalent power at 310 nm and 360 nm was 9.81×10-15 W and 2.78×10-12 W, respectively. Furthermore, the detectivity at 310 nm and 360 nm was 9.67×1013 and 3.41×1011 cmHz0.5W-1, respectively.

Chapter 1
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Chapter 2
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Chapter 3
[1] S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, D. P. Norton,　N. Theodor-opoulou, A. F. Hebard, Y. D. Yark, F. Ren, J. Kim, and L. A. Batner, “Wide bandgapferromagnetic semiconductors and oxides,” J. Appl. Phys., 93, 1 (2003)
[2] H. Asıl, E. Gür, K. C¸ ınar, and C. Coskun, “Electrochemical growth of n-ZnO onto thep-type GaN substrate: p–n heterojunction characteristics,” Appl. Phys. Lett., 94, 253501 (2009)
[3] D. C. Look, J. W. Hemsky, and J. R. Sizelove, “Residual native shallow donor in ZnO”, Phys. Rev. Lett., 82, 2552 (1999).
[4] L. W. Lai, J. T. Yan, C. H. Chen, L. R. Lou, and C. T. Lee, “Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system”, J. Master. Res., 24, 2252 (2009).
[5] E. Oh, H. Y. Choi, S. H. Jung, S. Cho, J. C. Kim, K. H. Lee, S. W. Kang, J. Kim, J. Y. Yun, and S. H. Jeong, “High-performance NO2 gas sensor based on ZnO nanorod grown by ultrasonic irradiation”, Sens. Actuator B, 141, 239 (2009).
[6] R. W. Chung, R. X. Wu, L. W. Lai, and C. T. Lee, “ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique”, Appl. Phys. Lett., 91, 231113 (2007).
[7] H. Y. Lee, S. D. Xia, W. P. Zhang, L. R. Lou, J. T. Yan, and C. T. Lee, “Mechanisms of high quality i-ZnO thin films deposition at low temperature by vapor cooling condensation technique”, J. Appl. Phys., 108, 073119 (2010).
[8] C. H. Chen and C. T. Lee, “Solar blind ultraviolet photodetectors with high dynamic resistance using Zn3Ta2O5 layer,” IEEE Photon. Technol. Lett., 27, 1817 (2015).
[9] C. H. Chen and C. T. Lee, “Enhancing the performance of ZnO nanorod/p-GaN heterostructured photodetectors using the photoelectrochemical oxidation passivation method”, IEEE Trans. Nanotechnol., 12, 578 (2013).
[10] C. T. Lee, Y. S. Chiu, S. C. Ho, and Y. J. Lee, “Investigation of a photoelectrochemical passivated ZnO-based glucose biosensor”, Sensors, 11, 4648 (2011).

Chapter 4
[1] M. Dutta and D. Basak, “p-ZnO∕n-Si heterojunction: Sol-gel fabrication, photoresponse properties, and transport mechanism”, Appl. Phys. Lett., 92, 212112 (2008).
[2] D. C. Look, G. C. Farlow, P. Reunchan, S. Limpijumnong, S. B. Zhang, and K. Nordlind, “Evidence for Native-Defect Donors in n-Type ZnO”, Phys. Rev. Lett., 95, 225502 (2005).
[3] C. X. Shan, J. Y. Zhang, B. Yao, D. Z. Shen, X. W. Fan, and K. L. Choy, “Ultraviolet photodetector fabricated from atomic-layer-deposited ZnO films”, J. Vac. Sci. Technol. B, 27, 1765 (2009).
[4] Y. N. Hou, Z. X. Mei, H. L. Liang, D. Q. Ye, S. Liang, C. Z. Gu, and X. L. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain”, Appl. Phys. Lett., 98, 263501 (2011).
[5] X. Gong, M. Tong, Y. Xia, W. Cai, J. S. Moon, Y. Cao, G. Yu C. L. Shieh, B. Nilsson, and A. J. Heeger, “High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm”, Science 325, 1665 (2009).
[6] X. Liu, L. Gu, Q. Zhang, J. Wu, Y. Long, and Z. Fan, “All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity”, Nat. Commun., 5, 4007 (2014).
[7] W. C. Lai, J. T. Chen, and Y. Y. Yang, “Optoelectrical and low-frequency noise characteristics of flexible ZnO-SiO2 photodetectors with organosilicon buffer layer” Opt. Express, 21, 9643 (2013).

Chapter 5
[1] C. H. Chen and C. T. Lee, “High detectivity mechanism of ZnO-based　nanorod ultraviolet photodetectors,” IEEE Photon. Technol. Lett., 25,　348 (2013).
[2] W. K. Hong, G. Jo, S. S. Kwon, S. Song, and T. Lee, “Electrical properties of surface-tailored ZnO nanowire field-effect transistors,” IEEE Trans. Electron Devices, 55, 3020 (2008).
[3] H. Y. Lee, C. T. Lee, and J. T. Yan, “Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes,” Appl. Phys. Lett., 97, 111111 (2010).
[4] Y. S. Chiu, C. Y. Tseng, and C. T. Lee, “Nanostructured EGFET pH sensors with surface-passivated ZnO thin-film and nanorod array,” IEEE Sensors J., 12, 930 (2012).
[5] C. Soci, A. Zhang, B. Xiang, D. P. R. Aplin, J. Park, X. Y. Bao,Y. H. Lo, and D. Wang, “ZnO nanowire UV photodetectors with high internal gain,” Nano Lett., 7, 1003 (2007).
[6] H. Y. Lee, H. L. Huang, and C. T. Lee, “Investigation of single n-ZnO/i-ZnO/p-GaN-heterostructed nanorod ultraviolet photodetectors,” IEEE Photon. Technol. Lett., 23, 706 (2011).