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| 研究生： |
翁聖翔 Wong, Sheng-Shong |
|---|---|
| 論文名稱： |
氮化銦鎵奈米柱壓電奈米發電器之光壓電特性 Piezo-phototronic Effects of InGaN Nanorod Piezoelectric Nanogenerator |
| 指導教授： |
吳忠霖
Wu, Chung-Lin |
| 學位類別： |
碩士 Master |
| 系所名稱： |
理學院 - 物理學系 Department of Physics |
| 論文出版年： | 2017 |
| 畢業學年度： | 105 |
| 語文別： | 中文 |
| 論文頁數： | 56 |
| 中文關鍵詞： | 氮化銦鎵 、奈米柱 、奈米發電器 、光壓電效應 |
| 外文關鍵詞： | InGaN, nanorod, Nanogenerator, Piezo-phototronics |
| 相關次數： | 點閱：98 下載：0 |
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利用分子束磊晶系統(MBE)在Si(111)基板成長氮化銦鎵奈米柱，磊晶過程中因氮化銦鎵奈米柱熱導率不高導致奈米柱由底到底銦含量從5%漸增至約45%。氮化銦鎵奈米柱本身具有自發極化與壓電極化場，在合金含量漸變情況下產生極化場漸變，進而導致極化摻雜現象。在照光環境下氮化銦鎵奈米發電器吸收光子所產生的電子電洞對屏蔽掉磊晶過程所產生的極化漸變，降低極化摻雜，進而使奈米發電器輸出電壓電流上升。我們成功利用高輸出氮化銦鎵奈米發電器驅動液晶顯示器與發光二極體。
We have grown InGaN nanorods on Si(111) substrate by using plasma-assisted molecular beam epitaxy(PA-MBE). The alloy composition of In increased lineally from 5% to 45% from bottom to top owing to low thermal conductivity of InGaN nanorod during growth process. According to the spontaneous and piezoelectric polarization properties in III-Nitrides semiconductor, graded alloy composition leads to polarization grading effect and further re-sults in polarization-induced doping effect. Therefore, free carriers in InGaN nanorods will increase. In general, free carriers move along with electric field and further reduce pie-zo-potential. However, under light illumination, a large number of electron-hole pairs are generated in the InGaN based nanogenerator (NG), these electron-hole pairs will be separated due to electric field in InGaN nanorods and further decrease built-in field in InGaN system. As a result, polarization grading effect will be slightly decrease and further lowering polari-zation-induced doping effect. Thus, the output of InGaN based nanogenerator is slightly in-creased under light illumination. At the end of this work, we utilize InGaN besed nanogener-ator to power LCD and LED. It shows the potential of being a green energy device.
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