本論文利用電漿增強式原子層沉積系統製備寬能隙氧化鎵薄膜，藉由在氧氣環境下以不同溫度700 oC、800 oC及900 oC熱處理氧化鎵薄膜，時間為15分鐘，探討其經熱處理之特性變化，以分光光譜儀量測不同溫度熱處理之薄膜穿透率，並換算其光學能隙值範圍在4.89 eV~4.93 eV，並以 X光光電子能譜儀與X光繞射分析儀進行薄膜分析驗證，薄膜經由適當的熱處理條件，可降低薄膜中的氧空缺，進而提升薄膜品質。將不同溫度熱處理之氧化鎵薄膜應用於金屬-半導體-金屬紫外光光檢測器中，作為深紫外光之吸收層，透過高溫熱退火處理後能降低光檢測器暗電流與改善元件特性，以提升紫外光光檢測器元件檢測能力。
本論文將分析氧化鎵薄膜經由不同熱退火溫度處理後，薄膜所含的氧空缺比例變化，藉由在氧氣環境下進行熱處理可以有效減少薄膜氧空缺含量，進一步降低金屬-半導體-金屬紫外光光檢測器元件暗電流及改善響應特性，元件在照光250 nm波段下具有最高光響應度。在不同溫度的氧氣環境中進行熱處理，可以發現氧化鎵薄膜於熱處理溫度為800 oC的條件下薄膜具有最少的氧空缺比例，藉由退火溫度800 oC熱處理後，元件具有最低暗電流及最高的響應特性，在施予偏壓5 V的情況下，與未退火的氧化鎵光檢測器元件相比，透過退火溫度800 oC熱處理後元件暗電流由40.36 pA下降至3.06 pA，元件於照光波長250 nm時最大光電流也由3.81 nA上升到23.42 nA，響應度從3.56 A/W提升到22.18 A/W，紫外光-可見光拒斥比由原先的7.27×103提升至5.97×104。在低頻雜訊的量測結果中，其總雜訊電流由1.82×10-12 A下降至7.97×10-13 A，等效雜訊功率由5.12×10-13 W下降至3.59×10-14 W，檢測度也從6.17×1011 cmHz1/2W-1上升到8.80×1012 cmHz1/2W−1。

In this study, the Ga2O3 film was deposited on the sapphire substrate by plasma-enhanced atomic layer deposition (PE-ALD) system using trimethylgallium and oxygen plasma. The Ga2O3 film was applied to metal-semiconductor-metal solar-blind deep ultraviolet photodetectors as the active layers. In order to improve thin film quality and photodetector response characteristics, the Ga2O3 film was annealed. The Ga2O3 films were annealed at 700, 800, and 900 oC for 15 min under O2 ambien. By annealing at differential temperature, which can lower the dark current of device and improve response characteristics.
In compare with the as-grown gallium oxide photodetector, the gallium oxide film annealed at 800°C photodetector had lower dark current and higher ultraviolet-visible rejection ratio. When the gallium oxide film was annealed at 800°C, the dark current of photodetector were improved from 40.36 pA to 3.06 pA, and the ultraviolet-visible rejection ratio were improved from 7.27 × 103 to 22.18 × 104 at a bias voltage of 5 V.

第一章
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第四章
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