本論文研究N型有機薄膜電晶體不同官能機介電層之光寫入載子儲存機制探討及應用。本實驗以重摻雜矽基板作為元件基板及不同官能基之有機高分子材料作為介電層，並使用自行合成的十三烷基駢苯衍生物(N,N’-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide, PTCDI-C13H27)作為電晶體半導體層，探討元件通道在照射雷射光後之電特性變化。
本實驗是以不同介電層所製作的有機薄膜電晶體(Organic thin film transistor, OTFT)元件探討含有不同官能基介電層材料之OTFT元件在照射532nm綠光雷射產生之光電流增益以及記憶效應。其中含有苯酚官能基之介電層材料聚(4-乙基苯酚) (Poly(4-vinylphenol), PVP)所製作的OTFT元件，其通道照射532nm綠光雷射後可產生電流增益以及臨界電壓的位移現象，且此現象有長時間記憶效應。若僅含苯環官能基之介電層材料聚苯乙烯((Poly(styrene), PS)、僅含羫基官能基之介電層材料聚乙烯醇(Poly(vinyl alcohol), PVA)之OTFT元件，其通道照射532nm綠光雷射後則無電流增益以及臨界電壓的位移現象。此部分實驗可說明苯酚官能基與光激子造成的OTFT元件電流增益及長時間記憶效應有關。
為了進一步分析此結果，另一部分實驗以介電層材料為PS以及介電層材料為PVA製程之OTFT元件，在介電層參雜含有苯酚官能基之材料鄰苯二酚，可發現無苯酚官能基之介電層材料在參雜鄰苯二酚後，照射532nm綠光雷射其OTFT元件也擁有電流增益及長時間記憶效應。在更進一步的實驗中我們利用介電層為PVP 4 wt%之OTFT元件，與利用過量聚(三聚氰胺-co-甲醛)甲醇(Poly(melamine-co-formaldehude), methylated, PMF)交聯反應PVP上羫基官能基之C-PVP 4:8 wt%作為OTFT之介電層，來比較兩者照光後之電特性變化。從實驗結果可發現介電層PVP的羫基官能基被PMF反應掉之後，OTFT元件的電流增益及長時間記憶效應隨之消失。因此更進一步驗證此長時間的光致OTFT元件電流增益及長時間記憶效應來自於苯酚官能基。

In this thesis, the mechanism of photo-induced current enhancement and memory effect phenomena in N-type organic thin-film transistor (OTFT) were studied. An active layer, N,N’-ditridecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI–C13H27), and a dielectric buffer layer, a phenolic family group-based OTFTs, were used to observe the photo-induced current enhancement and occurrence of memory effect when a channel of OTFT was irradiated by a 532nm-wavelength laser.

To investigate these unusual phenomena, a polymer dielectrics with different functional group, namely, poly-4-vinylphenol (PVP), polystyrene (PS), and polyvinyl alcohol (PVA), were fabricated as dielectric buffer layers for OTFTs. The OTFT device with the PVP dielectric layer exhibited photo-induced current enhancement and memory effect phenomenon when the channel of OTFT was irradiated by a laser with 532nm wavelength. However, the devices with PS or PVA dielectric buffer layers did not exhibit these phenomena. These results indicated that only OTFTs with a phenol functional group in the dielectric buffer layer can exhibit photo-induced current enhancement and memory effect phenomenon.

To further confirm the photo-induced current enhancement and memory effect phenomenon, a phenolic family compound catechol was doped in PS and PVA dielectric buffer layers of OTFT devices. Both catechol-doped PS and PVA dielectric buffer layers of OTFTs showed photo-induced current enhancement and memory effect phenomenon. Finally, excess poly(melamine-co-formaldehyde) was crosslinked with PVP, in which the hydroxyl group was totally reacted. The photo-induced current enhancement and memory effect phenomenon were not observed on OTFT with the crosslinked PVP dielectric buffer layer.

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