本研究主要針對表面離子阱進行結構設計、有限元素分析、微機電製程製作與初步電性量測，並以Yb+離子作為主要模擬對象。首先，利用有限元素分析法探討RF電極寬度、DC電極寬度、離子高度、RF頻率與陷阱深度之間的關係，並以穩定參數q=0.3 作為設計條件進行分析。模擬結果顯示，在固定離子高度下，RF電極寬度會隨著DC電極寬度增加而下降，兩者呈現明顯反向關係。此外，提高RF頻率可在一定程度上提升或維持陷阱束縛能力。根據模擬結果，本研究以陷阱深度大於0.09 eV且離子高度位於70～80 μm 作為設計篩選條件，取得適合後續製作之表面離子阱幾何參數。
在製程方面，本研究利用MEMS製程完成表面離子阱晶片製作，並整合鎳 (Ni)金屬溫度感測器以監測晶片溫度。製程結果經電子顯微鏡觀察後，確認表面離子阱電極圖案已成功轉移至基板，且整體結構與設計相符；各電極與感測器導線之間亦維持良好絕緣與分離，顯示所採用之製程流程可實現所設計之晶片結構。
在電性量測方面，本研究首先利用已知電容與不同電感建立LC諧振電路，並透過非線性擬合反推出量測系統之寄生電感與寄生電容，分別約為1.09 μH 與13.8 pF。接著，將寄生參數納入表面離子阱晶片之電容量測分析，得到晶片等效電容約為40.9 pF。此結果可作為後續RF匹配電路設計與共振頻率調整之依據。另一方面，Ni 金屬溫度感測器之量測結果顯示，其電阻值隨溫度上升而增加，並呈現近似線性關係，經擬合後得到電阻與溫度之關係式為R(T)=(0.0327±0.0004)T+(15.081±0.004) kΩ，顯示該感測器具有明確之溫度響應。
最後，根據晶片等效電容完成RF驅動電路設計，並利用可變電容將整體電路之諧振頻率調整至20 MHz。在RF輸入功率由5 dBm增加至30 dBm之量測範圍內，反射損耗之主要諧振頻率未產生明顯偏移，反射頻譜谷值約維持於–5 dB，所計算之品質因子Q約為8.0，顯示RF驅動電路於20 MHz附近具有穩定之諧振特性。另一方面，隨RF輸入功率增加，晶片溫度逐漸升高，且溫度響應峰值呈現向低頻方向偏移之趨勢，顯示RF操作所產生之熱效應會進一步影響表面離子阱之頻率響應。綜合上述結果，本研究完成表面離子阱之結構設計、製程製作、電性量測及RF驅動驗證，並建立其RF操作下之溫度響應特性，可作為後續離子阱晶片效能優化與穩定操作之參考。

This study presents the simulation, fabrication, and electrical characterization of a surface ion trap designed for Yb+ ions. Finite-element-method (FEM) simulations were performed to investigate the effects of electrode geometry on the ion height, stability parameter, and trap depth. The simulation results showed that the RF electrode width WRF decreases as the DC electrode width WDC increases under a fixed ion height, indicating a clear geometric compensation between the RF and DC electrodes. For a fixed stability parameter q = 0.3, RF drive frequencies of 20, 22, and 24 MHz were analyzed, yielding trap depths ranging from 0.04 to 0.12 eV. Based on the criteria of a trap depth greater than 0.09 eV and an ion height between 70 and 80 μm , an optimal design region was identified.
The surface ion trap chip was fabricated using a MEMS process. SEM imaging confirmed that the main electrode structures were successfully transferred to the substrate and that the first metal layer was fully covered by a 300-nm-thick SiO2 insulating layer. Electrical measurements were also performed to determine the equivalent capacitance of the ion trap and characterize the response of the integrated nickel (Ni) temperature sensor. After accounting for parasitic contributions, the equivalent capacitance of the trap chip was extracted as 40.9 pF. The Ni sensor exhibited a nearly linear resistance–temperature relationship with a sensitivity of approximately 32.7 (Ω /°C ). The resonant frequency was tuned to 20 MHz. Over an RF input-power range of 5–30 dBm, the resonant frequency remained relatively stable, with a return loss of approximately -5 dB and a quality factor Q of approximately 8.0. As the RF input power increased, the chip temperature gradually rose, while the peak of the temperature response shifted toward lower frequencies. These results indicate that RF-induced heating can affect the frequency response of the surface ion trap.

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